Fluoride-based plasma treatment is a robust technique that enables shallow implantation of fluorine ions into group III-nitride epitaxial structures. This technique has been used to achieve robust threshold voltage control of the AlGaN∕GaN high electron mobility transistors and led to the realization of self-aligned enhancement-mode devices. To reveal the atomic scale interactions and provide a modeling tool for process design and optimization, a molecular dynamics (MD) simulation is conducted for fluorine plasma ion implantation. Specific potential functions are applied to calculate the interactions among atoms and simulate the dynamic process of fluorine ions’ penetration and stopping in III-nitride materials. The MD simulation provides accurate information on dopant profiles that are verified by secondary-ion-mass-spectrum measurements. Defect formation and distributions, that are critical in process development, are also investigated.

One of the most effective methods integrating self-rectifying RRAM is alleviating sneak current in crossbar architecture. In this work, to investigate RRAMs with excellent properties of self-rectifying effect, simple Cu/HfO2/n-Si tri-layer devices are fabricated and investigated through I − V characteristic measurement. The experimental results demonstrate that the device exhibits forming-free behavior and a remarkable rectifying effect in low resistance state (LRS) with rectification ratio of 104 at ±1 V, as well as considerable OFF/ON ratio (resistive switching window) of 104 at 1 V. The formation and annihilation of localized Cu conductive filament plays a key role in the resistive switching between low resistance state (LRS) and high resistance state (HRS). In addition, intrinsic rectifying effect in LRS attributes to the Schottky contact between Cu filament and n-Si electrode. Furthermore, satisfactory switching uniformity of cycles and devices is observed. As indicated by the results, Cu/HfO2/n-Si devices have a high potential for high-density storage practical application due to its excellent properties.