A new Ga0.5In0.5P light-emitting diode (LED) with order/disorder/order (DOD) structure has been fabricated by metalorganic chemical vapor deposition. Growth temperature and dopant concentration were successfully used as growth parameters to obtain a heterojunction-equivalent structure. From the 77 K photoluminescence measurement, three peak energies of the DOD structure can be resolved clearly. It is shown that the DOD structure is equivalent to the double-heterojunction structure. The wavelength of the LED occurring at 667 nm coincides with the ordered active layer emission. The light intensity of the DOD LED is seven times stronger as compared with that of the homojunction disordering LED at the injection current of 10 mA. These results demonstrate that the DOD structure can provide good electrical and optical confinements and can be served as heterojunction-equivalent applications.

In this study, the barium fluotitanate powder prepared by the precipitate of hexafluorotitanic acid and barium nitrate solution was used as the precursor for the deposition of barium titanate film on silicon substrate. The boric acid was incorporated into the deposition solution to enhance the deposition rate. A mirrorlike film can be obtained. The chemical reaction of liquid-phase deposited barium titanate is proposed. The leakage current density is as low as 5 × 10 -9 A/cm 2 . The dielectric constant and the refractive index of the deposited film are 60 and 1.96, respectively.

Articles you may be interested inEffects of ordering on the operation of AlGaInP lasers grown by metalorganic chemical vapor deposition Ordering effect on the performance of Ga0.5In0.5P visible lightemitting diodes grown by metalorganic chemical vapor deposition Selenium and zinc doping in Ga0.5In0.5P and (Al0.5Ga0.5)0.5In0.5P grown by metalorganic chemical vapor deposition J. Appl. Phys. 66, 5285 (1989); 10.1063/1.343718 Disordering of the ordered structure in metalorganic chemical vapor deposition grown Ga0.5In0.5P on (001)GaAs substrates by zinc diffusion Appl. Phys. Lett. 52, 2142 (1988); 10.1063/1.99558Al0.5Ga0.5AsGaAs heterojunction phototransistors grown by metalorganic chemical vapor deposition

Variations in the magnitude and sign of the strain in epitaxial InP directly on (001) Si are studied as a function of layer thickness using photoluminescence and x-ray diffraction techniques. The heteroepilayers were grown by low-pressure metalorganic chemical vapor deposition and showed good quality. We find that biaxial compressive strains are still present in InP layers with thickness up to 0.8 μm. The magnitudes of compressive strains are much larger than those expected from the equilibrium theory. With increasing thickness above 1 μm, the InP/Si layers suffer biaxial tensile strains as a result of differential thermal contraction during the cooling process after growth.

p +/n/n+ InP solar cells have been fabricated directly on (100) Si substrates by low-pressure organometallic vapor phase epitaxy. The best experimental cell without an antireflection coating exhibits an air mass one efficiency of 11.9%. The corresponding open-circuit voltage, short-circuit current, and fill factor are 0.78 V, 22.47 mA/cm2, and 0.63, respectively. An electrical characterization identifying loss mechanism is proposed.