Ordering effects on the electrical characteristics of Ga0.5In0.5P grown by metalorganic chemical vapor deposition

Lee, M. K.; Horng, Ray−Hua; Haung, L. C.

doi:10.1063/1.105751

Cited by 26 publications

(7 citation statements)

References 15 publications

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“…Consequently, the lattice matched band gap is 1.97 eV which is consistent with little or no ordering. [6][7][8] The 77 K photoluminescence linewidth of 11 meV compares well with metalorganic chemical vapor deposition ͑MOCVD͒ and gas source molecular-beam epitaxy ͑GS-MBE͒ results. 8,9 A weak peak approximately 30 meV below the bandedge is also observed and has been attributed to a donor-acceptor pair transition.…”

Section: Resultssupporting

confidence: 69%

“…[6][7][8] The 77 K photoluminescence linewidth of 11 meV compares well with metalorganic chemical vapor deposition ͑MOCVD͒ and gas source molecular-beam epitaxy ͑GS-MBE͒ results. 8,9 A weak peak approximately 30 meV below the bandedge is also observed and has been attributed to a donor-acceptor pair transition. 10 The electrical properties of the GaInP layers were examined by Hall effect and capacitance-voltage (C -V) profiling.…”

Section: Resultssupporting

confidence: 59%

See 1 more Smart Citation

Solid source molecular-beam epitaxial growth of Ga0.5In0.5P using a valved, three-zone phosphorus source

Hoke¹

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Section: Resultssupporting

confidence: 69%

Section: Resultssupporting

confidence: 59%

Solid source molecular-beam epitaxial growth of Ga0.5In0.5P using a valved, three-zone phosphorus source

Hoke¹

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…The effect has been attributed to diffusion in the bulk. 14,17,18 Recently, Te added during OMVPE growth of GaInP was observed to increase the [ -110] step velocity dramatically, which resulted in the growth of disordered material. [9][10][11] This is one of the few examples of surfactant effects during OMVPE growth.…”

Section: Introductionmentioning

confidence: 99%

Surfactant effects of dopants on ordering in GaInP

Stringfellow

Lee

Fetzer

et al. 2000

Journal of Elec Materi

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The use of surfactants for control of specific aspects of the VPE growth process is beginning to be studied for both the elemental and III/V semiconductors. The objective is to change the characteristics of the material grown epitaxially by the addition of a surfactant during growth. Most reported surfactant effects for semiconductors relate to some detail of the morphology of the growing films. For ordered semiconductor alloys the effects can be much more dramatic, including major changes in the electrical and optical properties. Since the bandgap energy is dependent on the microscopic arrangement of the atoms in an alloy with a fixed composition, the change in order parameter induced by the surfactant translates into a marked change in the bandgap energy. This paper presents the results of a study of the effects of n-type (Te and Si), p-type (Zn), and isoelectronic (Sb) dopants on the ordering process in GaInP grown by OMVPE. All of the dopants studied were found to decrease or eliminate ordering; however, the mechanisms are quite different. The donor Te apparently affects the adatom attachment kinetics at steps on the (001) surface, a surfactant effect. On the other hand the donor Si was found to decrease the degree of order by an entirely different mechanism, attributed to an increase in the Ga and In diffusion coefficients in the bulk. It apparently does not involve the surface. Disordering due to the acceptor Zn was found to occur by the same mechanism. The isoelectronic impurity Sb is found to act as a surfactant and to decrease the order parameter by changing the surface reconstruction, eliminating the [ -110]-P dimers that provide the thermodynamic driving force for formation of the CuPt structure during growth.surface by increasing the temperature or decreasing the partial pressure of the group V precursor during OMVPE growth. 3,4 Although the driving force for ordering is understood, the mechanism remains unknown; however, several speculative models have been proposed. 5 Besides the known role of surface reconstruction, surface steps may also be important factors in the ordering process. For example, [110] steps are observed to assist the ordering process but [ -110]steps retard ordering. 6 Kinetic effects at step edges apparently affect the ordering process under certain growth conditions. One of the factors having a strong effect on ordering is doping. Several studies in GaInP have demonstrated a connection between ordering and n-type 7-11 or p-type 12-18 dopant concentration. The results show that a drastic decrease in ordering is caused by intro-

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“…It has been reported that ordered crystals often showed rather smaller mobilities, compared with the disordered alloys, probably due to an interface scattering. 17,18 The ordered alloys made in this study, on the contrary, exhibit higher electron mobilities than that of the disordered alloys, indicating that the scattering at the interfaces between ZnSe and ZnS layers is negligible. Figure 5 shows the temperature dependence on the Hall mobility for ͑ZnS͒ 3 ͑ZnSe͒ 42 ͑a͒ and ZnS 0.07 Se 0.93 ͑b͒.…”

Section: A Structures and Pl Propertiesmentioning

confidence: 69%

Growth of iodine-doped ZnS0.07Se0.93 disordered alloys and electron mobility enhancement by ordered structures in (ZnS)3(ZnSe)42

Fujiwara¹,

Kiryu²,

Toshihiro³

et al. 1996

Journal of Applied Physics

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Carrier transport properties of ͑ZnS͒ 3 ͑ZnSe͒ 42 ordered and ZnS 0.07 Se 0.93 disordered alloys are studied. Iodine-doped ZnS 0.07 Se 0.93 was grown by hydrogen radical-enhanced chemical vapor deposition at a low temperature of 200°C. These iodine-doped ZnS 0.07 Se 0.93 are characterized by sharp x-ray diffraction peaks and dominant blue band-edge emissions in photoluminescence spectra. It was found that ͑ZnS͒ 3 ͑ZnSe͒ 42 ordered alloys show higher electron mobility over 100 cm 2 /V s than that of ZnS 0.07 Se 0.93 disordered alloys at a low electron concentration of ϳ10 16 cm Ϫ3 , even though these crystals have the same sulfur composition and crystallinity. This mobility enhancement in the ordered alloys is attributed to the elimination of ''disorder scattering'' originated from random atomic fluctuations in the disordered alloys. Carrier scattering mechanisms and donor activation processes in the ordered and disordered alloys were further determined by a temperature dependence of Hall measurement.

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Ordering effects on the electrical characteristics of Ga0.5In0.5P grown by metalorganic chemical vapor deposition

Cited by 26 publications

References 15 publications

Solid source molecular-beam epitaxial growth of Ga0.5In0.5P using a valved, three-zone phosphorus source

Solid source molecular-beam epitaxial growth of Ga0.5In0.5P using a valved, three-zone phosphorus source

Surfactant effects of dopants on ordering in GaInP

Growth of iodine-doped ZnS0.07Se0.93 disordered alloys and electron mobility enhancement by ordered structures in (ZnS)3(ZnSe)42

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