1995
DOI: 10.1116/1.588149
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Solid source molecular-beam epitaxial growth of Ga0.5In0.5P using a valved, three-zone phosphorus source

Abstract: Articles you may be interested inInGaP/GaAs/InGaP doubleheterojunction bipolar transistors grown by solidsource molecularbeam epitaxy with a valved phosphorus cracker

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Cited by 15 publications
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