A high-frequency magnetic force microscope (HF-MFM) is built up for the observation of the high-frequency stray fields of harddisk write heads. We demonstrate the performance of the system using harddisk write heads from different manufacturers. We show that the use of advanced high-aspect ratio MFM cantilevers yields HF-MFM images with clearly improved spatial resolution. Furthermore, we present results obtained using MFM cantilevers with a magnetic coating of Ba3Co2Fe24O41 (BCFO).

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Articles you may be interested inMagnetic domain structure in nanocrystalline Ni-Zn-Co spinel ferrite thin films using off-axis electron holography Increase in perpendicular coercivity of Co-Ni ferrite-plated films by Zn ferrite underlayers Thin films of two types of ferrites, NiZnFe 2 O 4 spinel ferrite and Co 2 Z-type hexaferrite ͑Ba 3 Co 2 Fe 24 O 41 ͒ were prepared by rf sputtering on Si ͑1 0 0͒ and ͑1 1 1͒ substrates. Films with a thickness up to 100 nm were prepared for analysis purposes, enabling the optimization of the sputter process. The purpose of these ferrite thin films is the preparation of magnetic force microscopy ͑MFM͒ cantilever coatings for use with a high-frequency magnetic force microscope ͑HF-MFM͒. As a basis for these probes, the authors employ commercial, micromachined silicon cantilevers. The typical thickness of the coatings was 50 nm. The MFM imaging properties of both types of ferrite-coated cantilevers are discussed in detail.

Thin‐films of Nix Zn1–x Fe2O4 [(Ni,Zn)‐ferrite] are grown by means of RF sputtering on Si(100) and (111) substrates, corresponding to the orientation of Si cantilevers for AFM/MFM measurements. We find that the ferrite can be sputtered directly onto the Si surfaces, but an additional annealing step is required to obtain a purely polycrystalline, soft magnetic film. The microstructure of the films is investigated employing transmission electron microscopy, electron backscatter diffraction and magnetic force microscopy. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Amorphous multilayers with low interface defect density were deposited in an ultrahighvacuum RF-glow discharge reactor by computer-controlled fast gas switching. An extensive film characterization was done including determination of carbon content by PES (proton enhanced scattering), grazing-incidence X-ray diffraction, measurement of ambipolar diffusion length, FTIR spectroscopy and hydrogen effusion. From PDS (photothermal deflection spectroscopy) a defect density of below 1011 cm-2 per interface is found.