This paper proposes a new MOS-gate transistor structure (IEGT) for the first time, that realizes enhanced electron injection so that the carrier distribution takes a form similar to that of a thyristor and a low forward voltage drop is attained even for 4500 V devices.A developed simple analytical one dimensional model can predict a sufficiently accurate current voltage curve and clarifies a new design criterion for IEGT operation, A fabricated 4500 V IEGT realized a 2 . 5 V forward voltage drop at 100 A/cmz. The IEGT had a current density over ten times that of the conventional trench gate IGBT at 2 . 5 V forward voltage drop, An operation mode of IEGT has been theoretically and experimentally confirmed. IEDM Technical b e s t .

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