This workshop paper gives an overview of local positioning and tracking principles for wireless sensor networks including recent results of the European project RESOLUTION (Reconfigurable Systems for Mobile Local Communication and Positioning). Measurements of a first demonstrator applying a frequency modulated continuous wave (FMCW) radar principle are presented. The unlicensed ISM band around 5.8 GHz, 150 MHz bandwidth and less than 25mW effective isotropic radiated transmit power are used. Excellent 3-D positioning accuracies in the order of 4 cm in an anechoic chamber and 18 cm in a conference hall with strong multipath and area of 800 m 2 are measured. Furthermore, the results of optimized radio frequency integrated circuits and a suitable compact flash card are outlined.

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A folded Gilbert cell mixer was implemented in 0.13 lm complementary metal oxide semiconductor (CMOS) technology. The downconversion mixer is designed for 5-6 GHz radio frequency (RF) band and an intermediate frequency (IF) of 500 MHz. A voltage conversion gain (CG) of 9 dB, a noise figure (NF) of 11 dB and an IIP3 of 2 dBm were demonstrated experimentally under very low power consumption conditions, only 4.2 mW for the mixer core. Considering the overall performance of the circuit, this paper shows that the folded mixer architecture is one of the most interesting frequency converter solutions for low-power mobile applications.

A fully integrated 5-6 GHz class-F power amplifier in 180 nm CMOS, optimised for low supply voltages (V dd ), is presented. At a V dd of 1.5 V, a power added efficiency (PAE) up to 42.7% and a 1 dB compression point (P 1dB ) of 16.2 dBm are measured. At 1.9 V V dd , a P 1dB of 18.4 dBm, a PAE of 42.8%, and a gain of 8.8 dB are achieved.Introduction: For narrowband applications, switched power amplifiers (PAs) offer high power added efficiency (PAE) by minimising power losses in the transistor. High efficiencies above 40% have been reported in [1, 2] for a low supply voltage (V dd ) of at least 2.7 V. A lower V dd for reduced mobile device battery count generally leads to a reduced P out and PAE. While III-V technologies provide high transit frequencies ( f t ) necessary for good switch characteristics as well as excellent passives, CMOS is preferred with respect to costs in mass fabrication and the ability for digital baseband integration.