A New 1200V-rating, trench gate NPT(Non Punch Though)-IGBT(Insu1ated Gate Bipolar Transistor) and -IEGT(Injection Enhancement Gate Transistor) have been developed. Some works for the IE(carrier [njection Enhancement) effect related to relatively high voltage devices were reported [1,2,3,4]. This time, the IE-effect was employed in 1200V-rating trench gate NPT-IGBT for the first time. The IE-effect was adopted mainly by making some p-bast: regions not contacted to the emitter electrode. By numerical simulation, it is found that the IE-effect is effective in reducing on-state voltage for 1200V-rating NPT-IGBT. On the basis of these investigations, a 15OA-rating IGBT chip was fabricated. The on-state voltage for this new device has resulted in as low as 1.8V at 85A/cmZ without sacrificing its ruggedness to withstand destruction and its margin for blocking voltage. Emitter r electrode r Source Itacted n-base 7 r collector \ I Fig. 1 New trench gate NPT-IGElT structure

No abstract

No abstract

No abstract