1200 V trench gate NPT-IGBT (IEGT) with excellent low on-state voltage

Abstract

A New 1200V-rating, trench gate NPT(Non Punch Though)-IGBT(Insu1ated Gate Bipolar Transistor) and -IEGT(Injection Enhancement Gate Transistor) have been developed. Some works for the IE(carrier [njection Enhancement) effect related to relatively high voltage devices were reported [1,2,3,4]. This time, the IE-effect was employed in 1200V-rating trench gate NPT-IGBT for the first time. The IE-effect was adopted mainly by making some p-bast: regions not contacted to the emitter electrode. By numerical simulation, it is found that the IE-effect is effective in reducing on-state voltage for 1200V-rating NPT-IGBT. On the basis of these investigations, a 15OA-rating IGBT chip was fabricated. The on-state voltage for this new device has resulted in as low as 1.8V at 85A/cmZ without sacrificing its ruggedness to withstand destruction and its margin for blocking voltage. Emitter r electrode r Source Itacted n-base 7 r collector \ I Fig. 1 New trench gate NPT-IGElT structure

A Review of Si MOS-gated Power Switches and PiN Rectifiers

“…5 shows the cross-section of a trench IGBT based on this principle, in which the channels are only located in the middle of the cell between adjacent trenches [35]. Another alternative [36] consists in an IGBT structure in which several individual cells are not contacted; therefore, the onstate voltage drop is reduced since the enhanced plasma effect is higher than the increase of channel resistance.…”

Physically based 2D compact model for power bipolar devices

“…Gate turn-off thyristors (GTOs) and conventional insulated gate bipolar transistors (IGBTs) are currently popular choices, however both devices have serious drawbacks: GTO thyristors require large gate currents to control them; whereas IGBTs suffer from a relatively high voltage drop and power dissipation in applications over 2 kV due to their lower conductivity modulation. The injection enhanced gate transistor (IEGT) [1,2] has been recently presented by TOSHIBA as a high voltage power device for the future as it combines the best properties of the GTO and IGBT devices: the device is easy to control as MOS device and it has thyristor/PiN diode like carrier distribution inside the n-base region when switched on (this reduces R DS;on of the device and on-state voltage drop).…”