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In small area MOSFET devices widely used in analog and RF circuit design, low frequency noise behavior is increasingly dominated by Random Telegraph Signal noise. For analog circuit designers, awareness of these single electron noise phenomena is crucial. If optimal circuits are to be designed these effects can aid in low noise circuit design if used properly, while they may be detrimental to performance if inadvertently applied. This paper presents the investigation of Random Telegraph Signal (RTS) implementation in circuit simulator. A model based on Shockley-Read-Hall statistics to explain the behavior is presented. This work takes into account the impact of noise power spectral density (PSD) dispersion. The distinctiveness of the noise variations is discussed in detail and the proposed mechanisms behind the phenomena are viewed in light of the collected data. Results are compared with experimental data.

A simple method to extract the effective channel length in deep-submicrometer devices with sub-2-nm gate oxide thickness is presented. The method uses the measured gate current from accumulation to strong inversion. It is easy to implement, fast, and accurate.