This paper gives comparison and discussion of adhesives used for attachment of silicon piezoresistive pressure sensor dies. Special attention is paid on low pressure sensor dies because of their extreme sensitivity on stresses, which can arise from packaging procedure and applied materials. Commercially available adhesives “Scotch Weld 2214 Hi-Temp” from “3M Co.” and “DM2700P/H848” from “DIEMAT”, USA, were compared. First of them is aluminum filled epoxy adhesive and second is low melting temperature (LMT) glass paste. Comparing test results for low pressure sensor chips we found that LMT glass (glass frit) is better adhesive for this application. Applying LMT glass paste minimizes internal stresses caused by disagreement of coefficients of thermal expansions between sensor die and housing material. Also, it minimizes stresses introduced during applying external loads in the process of pressure measuring. Regarding the measurements, for the sensors installed with filled epoxy paste, resistor for compensation of temperature offset change had negative values in all cases, which means that linear temperature compensation, of sensors installed this way, would be impossible. In the sensors installed with LMT glass paste, all results, without exception, were in their common limits (values), which give the possibility of passive temperature compensation. Furthermore, LMT glass attachment can broaden temperature operating range of MEM silicon pressure sensors towards higher values, up to 120 ºC

Silicon single crystal surfaces have been modified by supersonic compression plasma flows (CPF) action. Triangular and rhombic regular fracture features are obtained on the Si (111), while rectangular ones are produced on Si (100) surface. Some of these regular structures can become free from the underlying bulk, formed as blocks ejected from the surface. Surface cleavage and exfoliation phenomena as the results of specific conditions during CPF interaction on silicon surface are, also, observed. Such conditions are the results of rapid heating and melting of surface layer, long existence of molten layer (~40 s) and fast cooling and recrystalisation taking place under the high dynamic pressure and thermodynamic parameters gradients.

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