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Temperature and pressure are the most common parameters to be measured and monitored not only in industrial processes but in many other fields from vehicles and healthcare to household appliances. Silicon microelectromechanical (MEMS) piezoresistive pressure sensors are the first and the most successful MEMS sensors, offering high sensitivity, solid-state reliability and small dimensions at a low cost achieved by mass production. The inherent temperature dependence of the output signal of such sensors adversely affects their pressure measurement performance, necessitating the use of correction methods in a majority of cases. However, the same effect can be utilized for temperature measurement, thus enabling new sensor applications. In this paper we perform characterization of MEMS piezoresistive pressure sensors for temperature measurement, propose a sensor correction method, and demonstrate that the measurement error as low as ± 0.3 °C can be achieved.

In this paper we present a high-performance, simple and low-cost method for simultaneous measurement of pressure and temperature using a single piezoresistive MEMS pressure sensor. The proposed measurement method utilizes the parasitic temperature sensitivity of the sensing element for both pressure measurement correction and temperature measurement. A parametric mathematical model of the sensor was established and its parameters were calculated using the obtained characterization data. Based on the model, a real-time sensor correction for both pressure and temperature measurements was implemented in a target measurement system. The proposed method was verified experimentally on a group of typical industrial-grade piezoresistive sensors. The obtained results indicate that the method enables the pressure measurement performance to exceed that of typical digital industrial pressure transmitters, achieving at the same time the temperature measurement performance comparable to industrial-grade platinum resistance temperature sensors. The presented work is directly applicable in industrial instrumentation, where it can add temperature measurement capability to the existing pressure measurement instruments, requiring little or no additional hardware, and without adverse effects on pressure measurement performance.

This paper gives comparison and discussion of adhesives used for attachment of silicon piezoresistive pressure sensor dies. Special attention is paid on low pressure sensor dies because of their extreme sensitivity on stresses, which can arise from packaging procedure and applied materials. Commercially available adhesives “Scotch Weld 2214 Hi-Temp” from “3M Co.” and “DM2700P/H848” from “DIEMAT”, USA, were compared. First of them is aluminum filled epoxy adhesive and second is low melting temperature (LMT) glass paste. Comparing test results for low pressure sensor chips we found that LMT glass (glass frit) is better adhesive for this application. Applying LMT glass paste minimizes internal stresses caused by disagreement of coefficients of thermal expansions between sensor die and housing material. Also, it minimizes stresses introduced during applying external loads in the process of pressure measuring. Regarding the measurements, for the sensors installed with filled epoxy paste, resistor for compensation of temperature offset change had negative values in all cases, which means that linear temperature compensation, of sensors installed this way, would be impossible. In the sensors installed with LMT glass paste, all results, without exception, were in their common limits (values), which give the possibility of passive temperature compensation. Furthermore, LMT glass attachment can broaden temperature operating range of MEM silicon pressure sensors towards higher values, up to 120 ºC