A series of sol-gel derived PZT films with various Zr/Ti ratios - namely PT, 0/100 - 20/80, 35/65, 53/47, 65/35, 80/20, 94/6 and PZ, 100/0 - were prepared on platinized Si wafers. Excess PbO was added to the precursor chemistries to compensate for eventual PbO loss and also to aid in obtaining the desired perovskite phase.It was found that the phase assembly, namely the presence of tetragonal or rhombohedral perovskite phases, plays an important role in determining the fatigue and retention behavior. PT-rich (or tetragonal) films offer better retention characteristics than those observed in PZ-rich (or rhombohedral) or PZT 53/47 films. Films with PZrich compositions tend to exhibit superior fatigue behavior compared with PT-rich films.

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A series of sol-gel derived PZT films with Zr:Ti ratios including 100:0, 94:6. 80:20, 65:35, 53:47. 35:65, 20:80 and 0: 100 was prepared on platinized Si wafers. The precursor chemistries were based on lead acetate and Zr/Ti alkoxides containing the appropriate amounts of cations in the required stoichiometries. Excess PbO was incorporated to compensate for PbO loss during processing. Films were fired to 700C where they were all single-phase perovskite as determined by XRD. Microlithography was performed to obtain Pt-PZT-Pt monolithic capacitors with 130 pm square electrode pads. Ferroelectric properties were obtained on these pads using a Radiant Technologies RT-66A Tester while the leakage characteristics were measured using a Keithley 617 Electrometer. The dielectric and ferroelectric properties of the PZT films were highly dependent on composition and processing conditions.

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