Effect of Zr/Ti Ratio on The Fatigue and Retention Behavior of Sol-Gel Derived Pzt Films

Abstract

A series of sol-gel derived PZT films with various Zr/Ti ratios - namely PT, 0/100 - 20/80, 35/65, 53/47, 65/35, 80/20, 94/6 and PZ, 100/0 - were prepared on platinized Si wafers. Excess PbO was added to the precursor chemistries to compensate for eventual PbO loss and also to aid in obtaining the desired perovskite phase.It was found that the phase assembly, namely the presence of tetragonal or rhombohedral perovskite phases, plays an important role in determining the fatigue and retention behavior. PT-rich (or tetragonal) films offer better retention characteristics than those observed in PZ-rich (or rhombohedral) or PZT 53/47 films. Films with PZrich compositions tend to exhibit superior fatigue behavior compared with PT-rich films.

Synthesis of Pb(Zr0.35−xMnxTi0.65)O3, x = 0.00, 0.02, 0.06, 0.10 ceramics and their structural, dielectric characteristics

“…This film has reportedly shown lower ò r and loss compared to 53/47 PZT film [32]. Also 35/65 PZT has been reported as a suitable material ferroelectric memories due to excellent fatigue properties [40]. The films grown by pulsed MOCVD has shown very large value of remanent polarization (30 μC cm −2 ) and low coercive field (55 kV cm −1 ) [41].…”

“…35/65 PZT material has been studied mostly in thin film form [37][38][39][40][41][42]. Optical properties of 35/65 on PZT thin film have been investigated for solar cell applications [37].…”

Novel Electrode Barriers for High Density Ferroelectric Nonvolatile Memories

“…Several attempts were made to decrease the polarization fatigue in PZT ferroelectric capacitors. These include use of metal oxide electrodes such as La 1--x Sr x CoO 3 [11,12], Y 1--x Ba x CuO 3 [13], RuO 2 [14] and so on, changing the composition of PZT [15], donor doped PZT [16] and utilizing the orientational effects of properties of PZT [12]. Use of metal oxide electrodes significantly reduced the polarization fatigue but gave rise to problems related to leakage current.…”