Original scientific paper https://doi.org/10.2298/TSCI161011114OIn the present work, an optimization technique is applied for inverse boundary design problem of radiative convective heat transfer of laminar duct flow by numerical method. The main goal is to verify how the solution of inverse problem is affected by the spectral behavior of the boundary surfaces. The conjugate gradient method is used to find the unknown temperature distribution over the heater surface to satisfy the prescribed temperature and heat flux distributions over the design surface. The bottom boundary surface (including design surface) is diffuse-spectral, while the top wall (heater surface) behaves as gray one. The variation of emissivity with respect to the wavelength is approximated by considering a set of spectral bands with constant emissivity and then the radiative transfer equation is solved by the discrete ordinates method for each band. The performance of the present method is evaluated by comparing the results with those obtained by considering a diffuse-gray design surface. Finally an attempt is made to investigate the spectral behavior of the design surface on the calculated temperature distribution over the heater surface.
Semiconductor materials with coatings have a wide range of applications in MEMS and NEMS. This work uses transfer-matrix method for calculating the radiative properties. Dopped silicon is used and the coherent formulation is applied. The Drude model for the optical constants of doped silicon is employed. Results showed that for the visible wavelengths, more emittance occurs in high concentrations and the reflectance decreases as the concentration increases. In these wavelengths, transmittance is negligible. Donars and acceptors act similar in visible wavelengths. The effect of wave interference can be understood by plotting the spectral properties such as reflectance or transmittance of a thin dielectric film versus the film thickness and analyzing the oscillations of properties due to constructive and destructive interferences. But this effect has not been shown at visible wavelengths. At room temperature, the scattering process is dominated by lattice scattering for lightly doped silicon and the impurity scattering becomes important for heavily doped silicon when the dopant concentration exceeds 10 18 cm -3 visible wavelengths
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