In the present study, we have investigated the sensing and detection mechanism of refractive index for extracellular vesicles from various EV samples by using the conventional and mirror image 1D defective photonic crystal designs. The transfer matrix method has been used to analyze the transmission properties of both structures at normal incidence. The performance of the proposed designs have been verified by measuring the shift in position of the defect mode inside PBGs of respective structures depending upon the change in refractive index of various EV samples and also by comparing the observed data with the experimentally available standard data. Moreover mirror image 1D defective PC design found suitable to be used as an alternative of 1D APC without defect with air core in which propagation of electromagnetic waves is along the radial direction. Finally we have compared the sensing and detection features of both designs made up of a conventional and mirror image 1D defective PCs. It has been noticed that the mirror image defective structure provides a narrow transmission peak of 100% inside the PBG.This remarkable feature of mirror image photonic sensing design may be utilized to develop various sensors ofwith high sensitivity, large values of FOM & Q factors and low LOD values.Such high performance bio-sensor with better achievements may be very useful in chemical and biological detection.

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Carbon Nanotube Field Effect Transistor (CNTFET) has proved to be very beneficial for VLSI circuit designs in the nano scale range due to its amazing properties than MOSFETs. As we reduce the gate length of the device to below 45nm, we see a lot of changes in its parameters such as stability of the cell reduces, power consumption and delay increases which are different from the traditional MOSFETs. This becomes a serious issue when we try to take traditional MOSFETs scale down from this technology node. The main aim of this paper is to design CNTFET 6T SRAM memory cell which consumes less power and is highly stable at 32nm technology node. The Stanford model files have proved to be very good for the CNTFET devices, which simulates on 32 nm technology nodes in HSPICE tool. The results shown in this paper clearly indicate that the stability enhances by approx. 27.55% of the CNTFET SRAM cell with 37.44% improvement in the power consumption. Explicit analysis of the results shows that CNTFET based 6T SRAM cell has improved power consumption, less delay and high stability with improved read & write noise margin than conventional 6T SRAM cell.

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