We present an experimental and theoretical investigation of the influence of a uniaxial magnetocrystalline anisotropy on the magnetic textures that are formed in a chiral magnetic system. We show that the epitaxially induced tensile stress in MnSi thin films grown on Si (111) creates an easy-plane uniaxial anisotropy. The magnetoelastic shear stress coefficient is derived from SQUID magnetometry measurements in combination with transmission electron microscopy and x-ray diffraction data. Density functional calculations of the magnetoelastic coefficient support the conclusion that the uniaxial anisotropy originates from the magnetoelastic coupling. Theoretical calculations based on a Dzyaloshinskii model that includes an easy-plane anisotropy predict a variety of modulations to the magnetic order that are not observed in bulk MnSi crystals. Evidence for these states is found in the magnetic hysteresis and polarized neutron reflectometry measurements.

A detailed investigation of the magnetization processes in epitaxial MnSi thin film reveals the existence of elliptically distorted skyrmion strings that lie in the plane of the film. We provide proof that the uniaxial anisotropy stabilizes this state over extended regions of the magnetic phase diagram. Theoretical analysis of an observed cascade of first-order phase transitions is based on rig- orous numerical calculations of competing chiral modulations, which shows the existence of helicoids, elliptic skyrmions, and cone phases

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Helical magnetic order in MnSi thin films

Stress-assisted Cu-induced lateral growth of polycrystalline germanium (poly-Ge) at temperatures as low as 150 °C has been exploited to fabricate thin-film tunneling transistors on flexible plastic substrates. Applying external compressive stress during annealing, leads to the lateral growth of poly-Ge from Cu-seeded drain/source regions, progressing into the channel area. A potential barrier is formed midway in the channel where the two lateral growth frontiers, emanating from source and drain seeded areas, meet each other. As confirmed by electrical measurements, the barrier is controlled by the gate bias. An ON/OFF ratio of 104 has been measured for these transistors, which shows the potential of these devices for switching applications.