Look-up table behavioral models (i.e. X-parameters, Cardiff model), input drive '|A11|' referenced, extracted directly from measurement data, provide an accurate non-linear CAD modeling solution. Typically, formulated, like s-parameters, in the travelling wave (A-B) domain, since these waves can be directly measured and controlled in the high frequency domain. However, if formulated in the admittance (I-V) domain they would provide a more robust MMIC design modelling solution supporting the capability of width and frequency scaling. Presently, no technique has been presented that allows for the extraction of admittance behavioral models directly from load-pull measurements. Previous solutions have all involved complex indirect procedures based on using an extracted (A-B) domain behavioral model and CAD simulations using voltage sources.In this paper, a new extraction approach is presented which, by including the influence of variable 'V11', allows for direct extraction of admittance behavioral models. This approach has been validated on GaN devices.Index Terms-behavioral model, non-linear modeling, GaN FETs, MMIC design, admittance domain.

No abstract

Non-linear frequency-domain I-V behavioral models have recently been proposed as an alternative to A-B behavioral models. Admittance formulation is suitable for model scaling with device size and fundamental frequency, very convenient for MMICs CAD. But direct extraction from NVNA measurements, easy to perform with A-B models, is difficult, since we need to account for input variations. Hence determining the required model complexity to aid in the extraction/modelling process becomes a key issue. In this paper, a systematic investigation of the Admittance model complexity requirements to obtain sufficiently accurate model predictions suitable for microwave power amplifier design requirements, is performed.

No abstract

No abstract