A Systematic Investigation of Admittance Domain Behavioral Model Complexity Requirements

Moure, M. Rocio; Casbon, Michael A.; Ladero, Nicolas; Fernandez-Barciela, M.; Tasker, P.J.

doi:10.1109/lamc.2018.8699054

Cited by 3 publications

(11 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This paper extends a preliminary work in Ref. [11], in which a general and limited study was performed with admittance models extracted from simulations and measurements but using fundamental only LP, at two different gain compression levels. In this work an extended complexity analysis is undertaken, fully focussed on determining the best model formulations for accurate PA design.…”

Section: Introductionmentioning

confidence: 59%

“…From the preliminary steps undertaken in Ref. [11], we soon drew some basic conclusions: When maximum

\vert b\vert

is limited to 0, model results are poor. …”

Section: Complexity Analysis and Error Figure Of Meritmentioning

confidence: 99%

“…The approach developed will be first verified using simulated data and then applied to NVNA measurements. Two different GaN Heterostructure FET (HFET) technologies are considered, going beyond [11] by probing different device sizes, bias points, fundamental frequencies, compression levels and multi‐harmonic injections.…”

Section: Introductionmentioning

confidence: 99%

“…In Section 3, some conclusions from the preliminary complexity analysis in Ref. [11] are summarized and an error metric defined. In Section 4, different complexity Admittance models are extracted using “measurements” obtained through simulations of a foundry model and are systematically evaluated in diverse extraction and PA design scenarios, all in the framework of Class B/J PA design.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Evaluation of admittance domain behavioural model complexity requirements for Power Amplifier design

Moure

Casbon

Ladero

et al. 2022

IET Microwaves Antenna & Prop

Self Cite

View full text Add to dashboard Cite

In the framework of Power Amplifier (PA) design for communications, frequency domain non-linear behavioural models have shown their potential as efficient complementary modelling tools when Field Effect Transistor compact models are not available or sufficiently accurate. The Admittance behavioural model, formulated in the V-I domain, is especially suitable for device size and fundamental frequency scaling. It is important to note that the direct extraction of this model, from the Nonlinear Vector Network Analyser (NVNA) load-pull (LP) measurements, requires some extra processing since it necessitates a Look-up-Table indexed to |V 11 | rather than |A 11 |. When using such models in PA design, there is the need for the user to select the necessary model complexity. To address this requirement, in this paper, a systematic analysis methodology, to guide the user, is presented and validated in different PA design scenarios. The methodology was tested using NVNA LP measurements of GaN Heterostructure FETs. A fifth order Admittance model formulation showed good accuracy in the studied PA design scenarios.

show abstract

Section: Introductionmentioning

confidence: 59%

“…From the preliminary steps undertaken in Ref. [11], we soon drew some basic conclusions: When maximum

\vert b\vert

is limited to 0, model results are poor. …”

Section: Complexity Analysis and Error Figure Of Meritmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Evaluation of admittance domain behavioural model complexity requirements for Power Amplifier design

Moure

Casbon

Ladero

et al. 2022

IET Microwaves Antenna & Prop

Self Cite

View full text Add to dashboard Cite

show abstract

“…The Cardiff model is used in its admittance form with an order of 5 [7], expressing the output fundamental current as:…”

Section: Modelmentioning

confidence: 99%

Gate bias voltage dependence of Cardiff admittance model in Ka-band GaAs pHEMTs

Baddeley

Azad

Quaglia

et al. 2022

2022 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)

View full text Add to dashboard Cite

This paper analyzes the dependence vs. gate bias voltage of the coefficients of the Cardiff model in the admittance form. The load-pull measurement data used to extract the model, inclusive of input power sweep, is taken on a GaAs pseudomorphic high electron mobility transistor (pHEMT) at the frequency of 36 GHz. The gate bias is swept in class C and in class AB and a different set of coefficients is extracted at each bias point.It is observed that the model coefficients can be fitted vs. bias using a linear function within the class C and class AB ranges. This allows to predict the model coefficients within a range of bias voltages with load-pull measurements at only a few bias points, significantly reducing the measurement effort. Using the predicted coefficients, the model shows a global error lower than -31 dB for the DC and fundamental output current.

show abstract

Review of RF Device Behavior Model: Measurement Techniques, Applications, and Challenges

Li,

Su,

Wang

et al. 2023

Micromachines

View full text Add to dashboard Cite

This review presents a concise overview of RF (radio frequency) power transistor behavior models, which is crucial for optimizing RF performance in high-frequency applications like wireless communication, radar, and satellites. The paper highlights the significance of accurate modeling in understanding transistor behavior and traces the evolution of behavior modeling techniques. Different behavior modeling strategies, such as LUT (look-up table) based models, polynomial equation-based models, and machine learning based models, are discussed along with their unique characteristics and modeling challenges. The review explores the difference between behavior models and the conventional empirical or physics-based modeling approaches, addressing the challenges of the accurate characterization of transistors at high frequencies and power levels. This paper concludes with an outlook of emerging trends, such as physical models combined with behavior models, shaping the future of RF power transistor modeling for more efficient communication systems.

show abstract

A Systematic Investigation of Admittance Domain Behavioral Model Complexity Requirements

Cited by 3 publications

References 6 publications

Evaluation of admittance domain behavioural model complexity requirements for Power Amplifier design

Evaluation of admittance domain behavioural model complexity requirements for Power Amplifier design

Gate bias voltage dependence of Cardiff admittance model in Ka-band GaAs pHEMTs

Review of RF Device Behavior Model: Measurement Techniques, Applications, and Challenges

Contact Info

Product

Resources

About