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Articles you may be interested inIn situ investigations of the metal/silicon reaction in Ti/Si thin films capped with TiN: Volumetric analysis of the C49-C54 transformation

It is shown that electron paramagnetic resonance spectroscopy provides an accurate method for measuring the preferential orientation of axial crystallites in ceramics. Since the physical properties of ceramic materials are correlated with the degree of this orientation, EPR can be a convenient and useful tool for the characterization of ceramics.

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Epitaxial refractory silicides were grown on silicon by solid phase epitaxy method. Transmission electron microscopy has been performed to study the microstructures of epitaxial layers and their orientation relationships with respect to substrate Si.Metal thin films, electron-gun deposited, or sputtered metal-silicon films were annealed in N2 ambient or in vacuum at 200°C-1100°C. Substrate heating, two step annealing and ion beam mixing were applied to induce the growth and improve the quality of epitaxial films. In this paper, formation and structures of epitaxial CrSi2, VSi2, ZrSi2, MoSi2 and WSi2 are presented. Preliminary results of the epitaxial growth of TiSi2, TaSi2 and NbSi2 are reported.