Localized epitaxial growth of C54 and C49 TiSi2 on (111)Si

Abstract

Articles you may be interested inIn situ investigations of the metal/silicon reaction in Ti/Si thin films capped with TiN: Volumetric analysis of the C49-C54 transformation

Structure and orientation of epitaxial titanium silicide nanowires determined by electron microdiffraction

“…They point out that the C49 to C54 transition temperature is elevated for ultrathin films ͑ϳ1 Å͒ on Si͑111͒ due to interface stabilization of the C49 phase. The first orientation essentially agrees with an earlier report by Fung et al, 14 for 100 Å Ti on Si͑111͒, annealed to 1000°C in a non-UHV.…”

Axiotaxy and epitaxial textures in C54-TiSi2 films on Si(0 0 1) and Si(1 1 1) substrates

“…Most texture studies on titanium silicides were performed during the 90's and focused on the epitaxial orientation of the TiSi 2 film with the substrate [14,15,16,19,17,20]. Several epitaxial orientations were reported (Table 1) and their origin was discussed within the frameworks of geometric-based models such as the 0-lattice [15] and edge-to-edge matching models [21] or by simply overlaying the atomic structure of both film and substrate [17].…”

Texture in thin film silicides and germanides: A review

“…[55][56][57][58] These studies focussed mainly on the texture of C54 on Si(111) as it was observed that the growth of this phase on Si (111) was mainly epitaxial and the interest in epitaxial silicides was high at that time. These studies mainly used XRD (h=2h and grazing incidence) and electron diffraction techniques to identify two main epitaxial texture components for C54 on Si (111): (1) Epitaxial growth of C54 on Si(001) was also studied by several groups during the 1990s.…”