A special prepatterning method is proposed for spatially ordered self-organizing quantum dots on anisotropic semiconductor substrates. Using three-dimensional kinetic Monte Carlo simulations, atoms are deposited with varying intermediate interruption times. We demonstrate the effect of interruption time and long-range anisotropic strain energy on island size uniformity and lateral alignment.

Three-dimensional (3D) InAs/GaAs quantum dots (QDs) island size and density evolution under different coverage and temperature is studied by using our 3D kinetic Monte Carlo (KMC) model. Our KMC model is based on the solid-on-solid one with bond counting and Ehrlich-Schwoebel barrier being incorporated. It is found that there is a QD island size limit for the growth coverage. Below this limit existing QD islands can adsorb new-coming adatoms; however, beyond the limit new QD islands will form and adopt new coming adatoms. It is also observed that with increasing temperature, the QD islands size will be increased while their density will be reduced.