A method for measuring acid generation efficiency is presented and utilized to determine the relative efficiency of four photoacid generators (PAGs) upon radiation with photon, electron, and ion beams. In this method, chemically amplified resists are prepared with varying amounts of base, coated into thin films (1000 AA), and exposed. Linear plots of the base concentration against the threshold exposure dose for each resist yield the threshold acid concentration and the acid generation rate constant for each PAG. The acid-generating efficiency of the four PAGs (ND-Tf, TPS-Tf, TBI-PFOS, and TBI-Tf) upon irradiation with DUV (248 nm), EUV (13.4 nm), X-ray (1 nm), e beam (30 and 50 keV), and He+ ions is evaluated

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To investigate causes and cures for resist profile edge roughness in ion projection lithography a model for exposure and development of chemically amplified resist exposed with He+ or H+ ions is described. The APEX-E resist system was chosen as a paradigm system. Predominant factors increasing line edge roughness are image blur and low exposure dose. Both effects result in formation of ion clusters in nominally unexposed regions close to feature edges. These clusters can lead to statistically distributed development paths and consequently to line edge roughness

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