No abstract

No abstract

No abstract

In situ ellipsometry has been used to monitor electron cyclotron resonance (ECR) plasma oxidation of InP at room temperature in the shadow plasma between a shutter and the sample. This process leaves no detectable excess P at the InP-oxide interface. A capping layer of SiO2 was grown by ECR chemical-vapor deposition at a substrate temperature of 150 °C. The samples were rapid-thermal annealed at 500 °C for 1 min in an oxygen ambient. The dielectric layers were evaluated by current-voltage and capacitance-voltage measurements on metal-oxide n-type InP capacitors.

Mn–In–Co, Mn–In–Pt and Mn–Pt metallizations are used to form ohmic contact on Be-implanted rapid thermally annealed GaAs. The rapid thermal alloying of contact metallizations are performed in A.G. Associates Heat pulse system in nitrogen atmosphere in the temperature range of 350°C to 800°C for 5 seconds. The contacts were found to be ohmic at an annealing temperature of 450°C. The In–Mn–Co metallization showed higher minimum contact resistivity (5 × 10−4 ohm.cm2 ) than In–Mn–Pt metallization (1.5 × 10−5 ohm.cm2 ) for an annealing temperature of 700°C and time 5 seconds. The surface morphologies of In–Mn–Pt metallizations were smooth even after alloying at 700°C for 5 seconds. The Auger analysis shows outdiffusion of Ga and As into the contact metallization and negligible indiffusion of In and Mn into GaAs.