Nitride films are grown on Ti, Ta, Mo, W, Ni, Si(111), and NaCl(100) substrates by ion implantation, and their phase composition, structure, and properties are studied. The films produced using a titanium target are multiphase and contain, in addition to TiN and Ti 2 N (and minor amounts of nitrides of the substrate metal), TiO 2 and oxides of the substrate metal in the form of islands 0.04 to 0.2 µ m in size, distributed at random over the film. The presence of several phases in the films determines their mechanical and electrical properties and ensures good adhesion and corrosion resistance.

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Thin films are grown on Si, Ta, Ti, Mo, W, and Ni substrates by reactive ion-beam sputtering, and their structure, phase composition, and properties are studied. The films are found to consist of the nitride and oxide of the substrate metal, TiN, and randomly distributed TiO 2 inclusions. All of the phases are polycrystalline. Si substrates are shown to have an epitaxial effect on the structure of the phases in the film. The films offer greater hardness, better adhesion, and higher corrosion resistance compared to those grown by ion implantation.

Nitride films are grown on Ti, Ta, Mo, W, Ni, Si(111), and NaCl(100) substrates by ion implantation, and their phase composition, structure, and properties are studied. The films produced using a titanium target are multiphase and contain, in addition to TiN and Ti 2 N (and minor amounts of nitrides of the substrate metal), TiO 2 and oxides of the substrate metal in the form of islands 0.04 to 0.2 µ m in size, distributed at random over the film. The presence of several phases in the films determines their mechanical and electrical properties and ensures good adhesion and corrosion resistance.

Films consisting of alternating nitride and oxide layers differing in phase composition and structure are grown on polycrystalline tungsten and molybdenum substrates by ion implantation. The resistivity and thermoelectric power of the films are measured as functions of temperature, and the temperature coefficient of their resistance is determined. The phase composition and electrical properties of the films are shown to be governed by the nitrogen-ion dose delivered to the titanium target.