A chemical deposition technique based on the use of solutions of metal-chelate coordination compounds has been applied to prepare rare-earth–manganite-oxide thin films. La0.67Ca0.33MnO3 and La0.67Sr0.33MnO3 thin films have been grown epitaxially on MgO(100) substrates and characterized by structural (x-ray diffraction analysis, atomic force microscopy) and magnetotransport (T=4.2–300 K, and B=0–5 T) measurements.

This paper deals with the results of a systematic investigation of damage generation and accumulation until amorphization induced by 180 keV Ca ϩ and Ar ϩ implantation in GaN films at liquid-nitrogen temperature. The structure of GaN films before and after implantation was characterized by Rutherford backscattering/ channeling, cross-sectional transmission electron microscopy, and high-resolution x-ray diffraction. The asimplanted GaN films exhibits an expanded lattice. Its texture was determined by pole figure measurement. An amorphous component has been found after Ca ϩ implantation at doses not less than 3ϫ10 14 cm Ϫ2. This suggests that Ca ϩ implantation for p-type doping be carried out below this dose, in order to avoid unrecoverable structural damage and to achieve better transport properties. On the other hand, implantation with higher doses is generally needed to compensate for the native electron background of GaN and to realize p-type reversal. This conflict uncovers the essential difficulty for p-type doping of GaN by ion implantation. The maximum damage concentration exists in a depth of 100 nm below the surface, which corresponds to the mean projected range, and broadens gradually towards surface and greater depth with increasing ion fluence. The thresholds for the amorphization of GaN films are revealed to be 6ϫ10 15 cm Ϫ2 for both Ca ϩ and Ar ϩ implantation. The amorphization mechanism is discussed and the accumulation of amorphous clusters seems to be the reason for the collapse of GaN crystalline. ͓S0163-1829͑98͒02904-X͔

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The effect of the film thickness on the evolution of texture of polycrystalline titanium nitride films grown by photon and ion beam assisted deposition has been investigated. The layers were deposited in high-vacuum on (111)Si with the N-ion energy constant at 2 keV and the incident ion/titanium flux ratio constant at 0.66 ions/atom. X-ray pole figure measurements show that the biaxial {001} texture is changed to the biaxial {111} texture with an increase of the film thickness. The texture evolution is explained by the existence of open channeling directions and the minimization of the elastic deformation energy.