The effect of the film thickness on the evolution of texture of polycrystalline titanium nitride films grown by photon and ion beam assisted deposition has been investigated. The layers were deposited in high-vacuum on (111)Si with the N-ion energy constant at 2 keV and the incident ion/titanium flux ratio constant at 0.66 ions/atom. X-ray pole figure measurements show that the biaxial {001} texture is changed to the biaxial {111} texture with an increase of the film thickness. The texture evolution is explained by the existence of open channeling directions and the minimization of the elastic deformation energy.
The biaxial alignment of TiN on Si(111) films prepared by nitrogen ion beam assisted deposition at room temperature was studied. By reactive deposition within a nitrogen environment a preferred {111} orientation was obtained the growing TiN crystallites. In contrast, a nitrogen ion bombardment perpendicular to the surface of the substrate during deposition causes an {001} alignment of the crystallites. A 55° ion beam incidence produces both {111}-orientation relative to the surface and {100}-orientation relative to the ion beam. This results in a totally fixed orientation of the crystallites. Simultaneous UV-light illumination during ion bombardment promotes a uniformly oriented growth.
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