Correction method= MULTI SCAN Data completeness= 0.992 Theta(max)= 27.500 R(reflections)= 0.0279(7516) wR2(reflections)= 0.0606(9345) S = 0.987 Npar= 397 The following ALERTS were generated. Each ALERT has the format test-name_ALERT_alert-type_alert-level. Click on the hyperlinks for more details of the test. Alert level B PLAT220_ALERT_2_B Large Non-Solvent C Ueq(max)/Ueq(min) ... 4.45 Ratio PLAT242_ALERT_2_B Check Low Ueq as Compared to Neighbors for C19 Alert level C PLAT222_ALERT_3_C Large Non-Solvent H Uiso(max)/Uso(min) ... 4.86 Ratio Publication of your CIF in IUCr journals A basic structural check has been run on your CIF. These basic checks will be run on all CIFs submitted for publication in IUCr journals (Acta Crystallographica,

In total, five metal oxide and one metal plasma-enhanced atomic layer deposition (PEALD) processes were studied with respect to the conformality of the coatings. The study reveals that also high aspect ratio structures (up to 60:1) can be coated conformally with remote PEALD. Oxides could relatively easily be deposited into demanding 3D structures with rather short cycle times but not the silver metal. The key factor in achieving excellent conformality seems to be that sufficient radical density is required to overcome the loss of radicals by recombination. In the case of metals where hydrogen plasma is applied the recombination of hydrogen radicals causes major difficulties in obtaining perfect conformality.

Mixed alkylamido-cyclopentadienyl compounds of zirconium, (RCp)Zr(NMe 2 ) 3 (R ¼ H, Me or Et) are introduced as precursors for atomic layer deposition (ALD) of high permittivity zirconium oxide thin films. Ozone was used as the oxygen source. Only slight differences were observed in the ALD growth characteristics between the three liquid precursors. The ALD-type growth mode was verified at 300 C with a growth rate of about 0.9 A ˚cycle À1 . Good film conformality was observed, as step coverages of 80-90% were measured for films deposited onto high aspect ratio (60 : 1) trenches. As compared to the commonly used Zr(NEtMe) 4 precursor, these novel precursors showed comparative volatility and growth rate but higher thermal stability, as well as lower impurity content in the deposited stoichiometric ZrO 2 films. The films deposited by the (RCp)Zr(NMe 2 ) 3 /O 3 processes tended to crystallize in the high temperature cubic form even when the film thickness exceeded 50 nm, while the Zr(NEtMe) 4 /O 3 process resulted in films with mixed phases. The cubic phase ensures high permittivity and thus the capacitance equivalent thickness remained extremely low, even below 0.8 nm, with low leakage current density of 10 À7 A cm À2 at 1 V when a 6.4 nm ZrO 2 film was deposited on TiN.

Initial reports of plasmonic 'hot-spots' enabled the detection of single molecules via surface-enhanced Raman scattering (SERS) from random distributions of plasmonic nanoparticles. Investigations of systems with near-field plasmonically coupled nanoparticles began, however, the ability to fabricate reproducible arrays of such particles has been lacking. We report on the fabrication of large-area, periodic arrays of plasmonic 'hot-spots' using Ag atomic layer deposition to overcoat Si nanopillar templates leading to reproducible interpillar gaps down to <2 nm. These plasmonic 'hot-spots' arrays exhibited over an order of magnitude increase in the SERS response in comparison to similar arrays with larger interpillar separations.

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