Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films

Abstract

Correction method= MULTI SCAN Data completeness= 0.992 Theta(max)= 27.500 R(reflections)= 0.0279(7516) wR2(reflections)= 0.0606(9345) S = 0.987 Npar= 397 The following ALERTS were generated. Each ALERT has the format test-name_ALERT_alert-type_alert-level. Click on the hyperlinks for more details of the test. Alert level B PLAT220_ALERT_2_B Large Non-Solvent C Ueq(max)/Ueq(min) ... 4.45 Ratio PLAT242_ALERT_2_B Check Low Ueq as Compared to Neighbors for C19 Alert level C PLAT222_ALERT_3_C Large Non-Solvent H Uiso(max)/Uso(min) ... 4.86 Ratio Publication of your CIF in IUCr journals A basic structural check has been run on your CIF. These basic checks will be run on all CIFs submitted for publication in IUCr journals (Acta Crystallographica,

Low-loss, infrared and terahertz nanophotonics using surface phonon polaritons

“…With the recent advances in ultra high quality and/or purity materials such as SiC, III-V and III-nitride semiconductors, further reductions are anticipated. While significant efforts have been aimed at improving metal surfaces for plasmonics through template removal [65], epitaxial growth [66] and atomic layer deposition [8,67,68], the potential for improvement is even greater in crystalline dielectric and semiconductor materials as point and extended defect densities are reduced further [69][70][71][72]. Therefore high-quality polar dielectric crystals can provide low optical losses, and through modification of their crystal lattice properties offer a wealth of options for supporting localized, propagating and epsilon-near zero (ENZ) [73] SPhP modes over a broad and adaptable spectral range.…”

Metallic subwavelength-cavity semiconductor nanolasers

“…51 Proper annealing process will reduce the loss in silver films as well. 52 Atomic layer deposition of silver is under investigation 53 to meet the requirement for film uniformity and thickness control in certain plasmonic devices. 54 Another interesting approach 55 that has attracted the attention of the community is the replacement of metals by highly doped semiconductors, as was done for long wavelengths.…”

Atmospheric pressure plasma enhanced spatial ALD of silver

“…1-3 As with most thin metal films, silver films have been reported to have a nanocrystalline morphology, 4 and potentially uncoalesced and nanoparticulate morphologies at early stages of the film growth. Accurate control of film morphology, thickness, and conformality over large areas of these metal films is key in tailoring the film parameters for each specific application.…”

“…Atomic layer deposition (ALD) is a technique with potential to meet these challenges, and recently, the deposition of silver films using conventional, vacuum-based ALD has been described in literature. 4,5 However, for applications in highvolume and low-cost manufacturing, such as thin film photovoltaics, conventional ALD has some drawbacks in terms of upscaling and throughput due to its low deposition rate. In the last few years, spatial atmospheric ALD has shown to enable the same high level of control as conventional ALD at industrial scales.…”

“…4,5 Yet, plasmas used in conventional plasma enhanced (PE-)ALD are typically low-pressure plasmas that can contain quite different physicochemical species than those at atmospheric pressures. In the past 20 years, the number of publications about atmospheric plasma-enhanced deposition has grown explosively as pointed out in a recent review by Merche et al 7 So far, only a few studies on PE-ALD of silver have been published, 4,5,[8][9][10] all of them involving conventional ALD using a remote low-pressure plasma source. Only recently, atmospheric pressure plasmas have been used in (spatial) ALD of oxides.…”