Multijunction solar cells employing perovskite and crystalline‐silicon (c‐Si) light absorbers bear the exciting potential to surpass the efficiency limit of market‐leading single‐junction c‐Si solar cells. However, scaling up this technology and maintaining high efficiency over large areas are challenging as evidenced by the small‐area perovskite/c‐Si multijunction solar cells reported so far. In this work, a scalable four‐terminal multijunction solar module design employing a 4 cm2 semitransparent methylammonium lead triiodide perovskite solar module stacked on top of an interdigitated back contact c‐Si solar cell of identical area is demonstrated. With a combination of optimized transparent electrodes and efficient module design, the perovskite/c‐Si multijunction solar modules exhibit power conversion efficiencies of 22.6% on 0.13 cm2 and 20.2% on 4 cm2 aperture area. Furthermore, a detailed optoelectronic loss analysis along with strategies to enhance the performance is discussed.

Organometal halide perovskites are attracting strong interest as light‐harvesting absorber materials in single‐ and multijunction solar cells. In order to advance the technology, careful optical design of the device architecture and elaborate analysis of optical losses are essential. In this work, a detailed optical analysis of semitransparent and opaque planar CH3NH3PbI3 solar cells is reported. Using a combination of variable‐angle spectroscopic ellipsometry and spectrophotometry data, the complex refractive indices of all involved materials in the device architecture are accurately determined, taking the underlying layer stack explicitly into account. The optical properties of partial and complete layer stacks of solar cells, comprising CH3NH3PbI3 films with different CH3NH3PbI3 surface topography roughnesses, are simulated using the transfer‐matrix method. Very good agreement between simulated and experimental data is demonstrated. Sub‐bandgap absorption is observed in CH3NH3PbI3 layer stacks, which is by means of a ray‐tracing model shown to be related to diffuse scattering at the multicrystalline CH3NH3PbI3/air interface. Finally, the optical losses of all layers are discriminated for opaque and semitransparent CH3NH3PbI3 solar cells and four‐terminal perovskite/Si tandem solar cells.

Thinning down the absorber layer of GaAs solar cells can reduce their cost and improve their radiation hardness, which is important for space applications. However, the lighttrapping schemes necessary to achieve high absorptance in these cells can be experimentally challenging or introduce various parasitic losses. In this work, a facile light‐trapping approach based on wet chemical etching is demonstrated. The rear‐side contact layer of ultrathin GaAs solar cells is wet‐chemically textured in between local Ohmic contact points using an NaOH‐based etchant. The resulting contact layer morphology is characterized using atomic force microscopy and scanning electron miscroscopy. High broadband diffuse reflectance and haze factors are measured on bare and Ag‐coated textured contact layers. The textured contact layer is successfully integrated as a diffusive rear mirror in thin‐film solar cells comprising a 300‐nm GaAs absorber and Ag rear contact. Consistent increases in short‐circuit current density (JSC) of approximately 3 mA cm−2 (15%) are achieved in the textured cells, while the open‐circuit voltages and fill factors do not suffer from the textured rear mirror. The best cell achieves a JSC of 24.8 mA cm−2 and a power conversion efficiency of 21.4%. The textured rear mirror enhances outcoupling of luminescence at open circuit, leading to a strong increase in the external luminescent efficiency.

We report thin-film InAs/GaAs quantum dot (QD) solar cells with n − i − p + deep junction structure and planar back reflector fabricated by epitaxial lift-off (ELO) of full 3-inch wafers. External quantum efficiency measurements demonstrate twofold enhancement of the QD photocurrent in the ELO QD cell compared to the wafer-based QD cell. In the GaAs wavelength range, the ELO QD cell perfectly preserves the current collection efficiency of the baseline single-junction ELO cell. We demonstrate by full-wave optical simulations that integrating a micro-patterned diffraction grating in the ELO cell rearside provides more than tenfold enhancement of the near-infrared light harvesting by QDs. Experimental results are thoroughly discussed with the help of physics-based simulations to single out the impact of QD dynamics and defects on the cell photovoltaic behavior. It is demonstrated that non radiative recombination in the QD stack is the bottleneck for the open circuit voltage (V oc ) of the reported devices. More important, our theoretical calculations demonstrate that the V oc offest of 0.3 V from the QD ground state identified by Tanabe et al., 2012, from a collection of experimental data of high quality III-V QD solar cells is a reliable -albeit conservative -metric to gauge the attainable V oc and to quantify the scope for improvement by reducing non radiative recombination. Provided that material quality issues are solved, we demonstrate -by transport and rigorous electromagnetic simulations -that light-trapping enhanced thin-film cells with twenty InAs/GaAs QD layers reach efficiency higher than 28% under unconcentrated light, ambient temperature. If photon recycling can be fully exploited, 30% efficiency is deemed to be feasible.