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Hydrogen uptake in metal-hydrogen (M-H) nanosized systems (e.g., thin films, clusters) is both a fundamental and a technologically relevant topic, which is becoming more important due to the recent developments of hydrogen sensors, purification membranes, and hydrogen storage solutions. It was recently shown that hydrogen (H) absorption in nanosized systems adhered to rigid substrates can lead to ultrahigh mechanical stress in the GPa range. About -10 GPa (compressive) stress were reported for hydrogen loaded niobium (Nb) thin films. Such high stresses can be achieved when conventional stress-release channels are closed, e.g., by reducing the system size. In this paper, we demonstrate that the high stress can be used to strongly modify the system's thermodynamics. In particular, a complete suppression of the phase transformation is achieved by reducing the film thickness below a switchover value d. Combined in situ scanning tunneling microscopy (STM) and in situ X-ray diffraction (XRD) measurements serve to determine the switchover thickness of epitaxial Nb/AlO films in the thickness range from 55 to 5 nm. A switchover thickness d = 9 ± 1 nm is found at T = 294 K. This result is supported by complementary methods such as electromotive force (EMF), electrical resistance, and mechanical stress measurements in combination with theoretical modeling.

Nano-materials are commonly stabilized by supports to maintain their desired shape and size. When these nano-materials take up interstitial atoms, this attachment to the support induces mechanical stresses. These stresses can be high when the support is rigid. High stress in the nano-material is typically released by delamination from the support or by the generation of defects, e.g., dislocations. As high mechanical stress can be beneficial for tuning the nano-materials properties, it is of general interest to deduce how real high mechanical stress can be gained. Here, we show that below a threshold nano-material size, dislocation formation can be completely suppressed and, when delamination is inhibited, even the ultrahigh stress values of the linear elastic limit can be reached. Specifically, for hydrogen solved in epitaxial niobium films on sapphire substrate supports a threshold film thickness of 6 nm was found and mechanical stress of up to (−10 ± 1) GPa was reached. This finding is of basic interest for hydrogen energy applications, as the hydride stability in metals itself is affected by mechanical stress. Thus, tuning of the mechanical stress-state in nano-materials may lead to improved storage properties of nano-sized materials.

Metal−hydrogen (M−H) systems offer grand opportunities for studies on fundamental aspects of thermodynamics and kinetics. When the system size is reduced to the nanoscale, microstructural defects as well as mechanical stress affect the systems’ properties. This is contemplated for the model system of epitaxial niobium−hydrogen (Nb−H) thin films. Hydrogen absorption in metals commonly leads to lattice expansion which is hindered when the metal adheres to a flat rigid substrate. Consequently, high mechanical stress of about −10 GPa for 1 H/Nb are predicted, in theory. However, metals cannot yield such high stresses and respond with plastic deformation, commonly limiting measured stresses to −2 to −3 GPa for 100 nm Nb−H films. It will be shown that the coherency state changes with film thickness reduction, shifting the onset of plastic deformation to larger hydrogen concentrations. Below critical film thicknesses, plastic deformation is fully absent. The system then behaves purely elastic and ultra‐high stress of about −10 (±2) GPa can be obtained. Arising stress controls the phase stability of M−H systems, and the coherency state strongly affects the nucleation and growth dynamics of the phase transition. In case of Nb−H thin films of less than 8 nm thickness the common phase transformation from the α‐phase solid solution to the hydride phase is completely suppressed at 300 K. Related effects can be utilised to optimise metal−hydrides used in applications.