Reducing the power consumption in static random access memory can significantly improve the system power efficiency, reliability, and performance. In this paper, we propose a data aware static random access memory cell to reduce the power consumption during read and write operation. The proposed cell contains nine transistors with separate read/write ports. The write operation in the proposed cell is controlled by an additional write signal instead of word line. Because of isolation of the storage nodes with bit lines, read signal-to-noise margin is equal to ideal hold signal-to-noise margin of the conventional cell. The proposed cell saves approximately more than 43% active power compared with the 6T cell and other published cells. The proposed cell gives faster write access and low leakage current compared with the conventional and other cells. About 99% standby column power reduction, with 128 cells, is observed in the proposed cell. (a) Leakage current during hold mode. (b) Simulated result for data retention voltage.Figure 5. (a) Leakage current during hold mode. (b) Simulated result for data retention voltage. 9T DATA AWARE SRAM CELL 963 Standby power reduces approximately 99% in case of one column with 128 cells when stored data is 0 in the proposed cell compared with the 6T cell. The read 0 access time degraded in the proposed cell that can be compensated by enlarging two ON series transistors. 966 A. K. SINGH, M. M. SEONG AND C. M. R. PRABHU

This paper presents a new power efficient single ended sense amplifier (SA). The proposed circuit is based on the direct current voltage conversion technique. It has been simulated using Microwind3 and DSCH3 tools (advanced BSIM 4 level) for 90 nm CMOS technology in terms of power consumption, sense time and results were compared to other circuits. The proposed SA circuit consumes more than 50% less power and gives 90% faster sensing speed compared to other circuits. The lower power consumption is due to lower leakage current, lower voltage drop on bit-line and faster speed is due to positive feedback of the circuit. The proposed circuit is more robust against any process and temperature variation.