Low absorption of graphene in the visible range of the spectrum makes it difficult to uniquely benefit from this material in ultra-fast optoelectronic applications. We numerically propose to utilize patterned metallic nanostructures to increase light absorption in single-layer graphene. Simulation results show that excitation of surface plasmon resonances in the metallic nanostructures significantly enhances the local electromagnetic field near the graphene layer, therefore leading to a dramatic enhancement of the absorption in the graphene layer itself. Broadband high optical absorption can be realized by engineering the metal nanostructures, while maintaining insensitivity to the incident angle. Our results pave a new and promising way to enhance visible-light absorption in the graphene layer, which is potentially interesting for graphene-based photovoltaics.

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The reversible insulating-to-conducting phase transition (ICPT) of vanadium dioxide (VO2) makes it a versatile candidate for the implementation of integrated optical devices. In this paper, a bi-functional in-line optical device based on a four-layer stack of PMMA/graphene/VO2/graphene deposited on a side-polished fiber (SPF) is proposed. The structure can be employed as an ultra-compact TE modulator or a TM-pass polarizer, operating at 1.55 μm. We show that the ICPT characteristic can be used for polarization-selective mode shaping (PSMS) to manipulate orthogonal modes separately. On the one hand, as an optical modulator, the PSMS is used to modify mode profiles so that the TE mode attenuation is maximized in the off-state (and IL is minimized in the on-state), while the power carried by the TM mode remains unchanged. As a result, a TE modulator with an ultrahigh extinction ratio (ER) of about ER = 165 dB/mm and a very low insertion loss (IL) of IL = 2.3 dB/mm is achieved. On the other hand, the structure can act as a TM-pass polarizer featuring an extremely high polarization extinction ratio (PER) of about PER = 164 dB/mm and a low TM insertion of IL = 3.86 dB/mm. The three-dimensional heat transfer calculation for the ICPT process reveals that the response time of the modulator is in the order of few nanoseconds. Moreover, the required bias voltage of the proposed device is calculated to be as low as 1.1 V. The presented results are promising a key step towards the realization of an integrated high-performance in-line modulator/polarizer.

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