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In this work, Aluminum doped Zinc oxide thin films were sputtered on glass substrate by the direct current (DC) magnetron sputtering method. The influence of Ar gas pressure on the structural and optical properties was measured. The optical parameters were calculated by UV-Visible spectroscopy, the nature of transition reveals direct allowed transition for the prepared films. Also, some physical quantities such as the strength of electron-phonon interaction, dissipation factor (tan) in the visible region and the lattice dielectric constant were presented for these thin films. The AFM analysis extracts surface parameters of the AZO thin films that help us to investigate the surface analysis with numerical data. The band gap energy and transition index without any presumption about transition natural were calculated from Derivation Ineffective Thickness Method (DITM) and the reaction of Ar gas pressure plays an essential part in controlling the physical quantities of AZO thin films.

No abstract

In this work, Aluminum doped Zinc oxide thin films were sputtered on glass substrate by the direct current (DC) magnetron sputtering method. The influence of Ar gas pressure on the structural and optical properties was measured. The optical parameters were calculated by UV- Visible spectroscopy, the nature of transition reveals direct allowed transition for the prepared films. Also, some physical quantities such as the strength of electron-phonon interaction, dissipation factor (tanδ) in the visible region and the lattice dielectric constant were presented for these thin films. The AFM analysis extracts surface parameters of the AZO thin films that help us to investigate the surface analysis with numerical data. The band gap energy and transition index without any presumption about transition natural were calculated from Derivation Ineffective Thickness Method (DITM) and the reaction of Ar gas pressure plays an essential part in controlling the physical quantities of AZO thin films.