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We have successfully deposited nanocrystalline cubic silicon carbide (nc-3C-SiC:H) films at a low substrate temperature of 360 C by very high-frequency plasma-enhanced chemical vapor deposition using monomethylsilane and hydrogen. Spectroscopic ellipsometry revealed that the crystalline volume fraction of the films increased from 69 to 92% with increasing hydrogen dilution ratio from 100 to 500. We found that the dark conductivity of the films was strongly affected by the crystalline volume fraction. A high deposition rate of 0.15 nm/s was achieved under a low hydrogen dilution ratio of 100.

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