A new host material based on the 2,7,4'-substituted spirobifluorene platform has been designed and used in single-layer phosphorescent OLED with very high efficiency (EQE = 13.2%) and low turn-on voltage (2.4 V). This performance is among the best reported for green single-layer PhOLEDs and may open new avenues in the design of host materials for single-layer devices.

Drop on Demand inkjet printing is an attractive method for device fabrication. However, the reliability of the key printing steps is still challenging. This explains why versatile functional inks are needed. Epoxy based ink described in this study could solve this critical issue because it can be printed with low drawbacks (satellites droplets, long-lived filaments, etc.). Moreover, a wide concentration range of solute allows the fabrication of films from thin to high aspect ratio. Optimizing experimental parameters (temperature, overlap) and ink composition (single or cosolvent) is useful to tune the film profile. As a result, many shapes can be obtained such as donuts or hemispherical caps for a droplet and smooth or wavy shape for a thin film. This study demonstrates that epoxy based versatile ink can be used in numerous fields of applications (organic electronics, optics, sensors, MEMS, etc.). To prove this assertion, organic field effect transistors and light emitting films have been fabricated.

The development of ultralow-power and easy-tofabricate electronics with potential for large-scale circuit integration (i.e., complementary or complementary-like) is an outstanding challenge for emerging off-the-grid applications, e.g., remote sensing, "place-and-forget", and the Internet of Things. Herein we address this challenge through the development of ambipolar transistors relying on solution-processed polymer-sorted semiconducting carbon nanotube networks (sc-SWCNTNs) operating in the deep-subthreshold regime. Application of self-assembled monolayers at the active channel interface enables the fine-tuning of sc-SWCNTN transistors toward well-balanced ambipolar deep-subthreshold characteristics. The significance of these features is assessed by exploring the applicability of such transistors to complementary-like integrated circuits, with respect to which the impact of the subthreshold slope and flatband voltage on voltage and power requirements is studied experimentally and theoretically. As demonstrated with inverter and NAND gates, the ambipolar deepsubthreshold sc-SWCNTN approach enables digital circuits with complementary-like operation and characteristics including wide noise margins and ultralow operational voltages (≤0.5 V), while exhibiting record-low power consumption (≤1 pW/μm). Among thin-film transistor technologies with minimal material complexity, our approach achieves the lowest energy and power dissipation figures reported to date, which are compatible with and highly attractive for emerging off-the-grid applications.