Near-field injection is a promising method in order to induce local faults in integrated circuits. This method can be used for various applications such as electromagnetic attacks on secured circuits or susceptibility investigations. This paper aims at evaluating the ability of near-field scan injection to induce local disturbances in integrated circuits. The study relies on measurements performed by on-chip voltage sensors, which provide an accurate method to characterize the induced voltage fluctuations.

Near-field injection is a promising method for the analysis of the susceptibility of electronic boards and circuits. The resulting immunity map provides a precise localization of the sensitive area to electromagnetic disturbances. A major requirement is the spatial resolution of the immunity map, which depends on the size of the injection probe and the separation distance between the probe and the device under test. This paper aims at proposing a post-processing method to enhance the spatial resolution of immunity map and validating it on case studies at board and integrated circuit levels.

International audienceNear-field injection at silicon die level is a promising application for various area such as the analyses of integrated circuit (IC) susceptibility to electromagnetic interferences and security for cryptographic applications. This paper presents a first attempt to simulate the voltage induced on integrated circuit interconnects by a magnetic field probe. The validation of the simulation results is based on near-field injection performed on a test chip containing various types of interconnects and on-chip voltage sensors