This paper investigates on-wafer characterization of SiGe HBTs up to 500 GHz. Test structures for on-wafer TRL calibration have been designed and are presented. The TRL calibration method with silicon standards has first been benchmarked through EM-simulation. Passive and active components are then characterized up to 500 GHz. The slight discontinuities between the frequency bands are explored. A specific focus was placed on incorrect horizontal probe positioning as well as on probe deformation, resulting in a better assessment of possible measurement errors.

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