Meander type transmission line design for on-wafer TRL calibration

Potereau, Manuel; Deng, Marina; Raya, C; Ardouin, Bertrand; Aufinger, Klaus; Ayela, Cédric; Dematos, Magalie; Curutchet, Arnaud; Fregonèse, Sébastien; Zimmer, Thomas

doi:10.1109/eumc.2016.7824358

Cited by 8 publications

(7 citation statements)

References 5 publications

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“…Moreover, in case of an industrial environment with automatic probe station, manual intervention is required at this stage or it can be replaced by an expensive additional horizontal motorized support installed on the probe holder. To overcome this difficulty, we propose to create a structure based on a repeating pattern to generate lines of different lengths having a scalable behavior with the number of patterns [19], [20] (see Fig. 6).…”

Section: Fig 5 Simplified Sketch Of a Cl-icpw Section The Transmismentioning

confidence: 99%

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THz Characterization and Modeling of SiGe HBTs: Review (Invited)

Fregonèse

Deng

Cabbia

et al. 2020

IEEE J. Electron Devices Soc.

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This paper presents a state-of-art review of on-wafer S-parameter characterization of THz silicon transistors for compact modelling purpose. After, a brief review of calibration/de-embedding techniques, the paper focuses on the onwafer calibration techniques and especially on the design and dimensions of lines built on advanced silicon technologies. Other information such as the pad geometry, the ground plane and the floorplan of the devices under test are also compared. The influence of RF probe geometry on the coupling with the substrate and adjacent structures is also considered to evaluate the accuracy of the measurement, especially using EM simulation methodology. Finally, the importance of measuring above 110 GHz is demonstrated for SiGe HBT parameter extraction. The validation of the compact model is confirmed thanks to an EM-spice cosimulation that integrates the whole calibration cum deembedding procedure.

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Section: Fig 5 Simplified Sketch Of a Cl-icpw Section The Transmismentioning

confidence: 99%

“…2D schematic of the meander line used for the on-wafer TRL calibration for the frequency range from 20 to 400 GHz[19][20].…”

mentioning

confidence: 99%

THz Characterization and Modeling of SiGe HBTs: Review (Invited)

Fregonèse

Deng

Cabbia

et al. 2020

IEEE J. Electron Devices Soc.

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“…This paper will make use of a novel architecture in which transmission lines are designed as meanders [17], i.e. the portion of the upper metal layer carrying the signal from port-1 to port-2 (and vice-versa) is rolled up in the direction perpendicular to the probe axes, as introduced in [18]. This allows to design lines with different lengths, as prescribed by the TRL algorithm, and same pad-to-pad (or port-to-port) distance.…”

Section: Introductionmentioning

confidence: 99%

“…This allows to design lines with different lengths, as prescribed by the TRL algorithm, and same pad-to-pad (or port-to-port) distance. Compared to [18], this work will extend the method up to 500 GHz and make use of a novel layout for the design of structures that reduces both the probe-to-substrate EM coupling and coupling with neighbors, as it will be described in the following. Also, this manuscript employs EM simulation as a way to verify measurement results and interpret them.…”

Section: Introductionmentioning

confidence: 99%

Meander-Type Lines: An Innovative Design for On-Wafer TRL Calibration for mmW and Sub-mmW Frequencies Measurements

Cabbia

Fregonèse

Deng

et al. 2021

IEEE Trans. THz Sci. Technol.

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In this work we introduce novel transmission line standards for on-wafer TRL calibration employing a meandering architecture, which aims to keep the inter-probe distance constant and avoid any probe separation during the measurement process, yet establishing the required signal path length between the ports. Measurements will be performed up to 500 GHz on passive de-embedding structures and on a SiGe HBT; they will be calibrated with both a classic approach and this novel "meander-type" technique. Furthermore, measurements will be evaluated by means of electromagnetic (EM) simulation: for this purpose, we will make use of Ansys HFSS on passive test structures. Finally, a novel joint EM-SPICE co-simulation analysis will allow to provide simulated data for a transistor, thus extending our study to active devices; this will allow a complete characterization of the measurements and an insight on the physical limits of our calibration technique.

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“…Calibration on Impedance Standard Substrate (ISS)standard combined with Open-Short de-embedding method is an industry de-facto standard but it becomes less accurate above 30 to 40 GHz [6,7]. More advanced de-embedding methods can be adopted to improve the accuracy [8][9][10] in cost of the complexity. To reduce reliance from less accurate offwafer calibrations, to improve accuracy and repeatability of the measured data, on-wafer calibration technique enabling accurate characterization of high speed devices in sub-THz frequency range is highly desirable [11].…”

Section: Introductionmentioning

confidence: 99%

Importance of complete characterization setup on on-wafer TRL calibration in sub-THz range

Yadav¹,

Deng²,

Matos³

et al. 2018

2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)

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In this paper, we present the effect of different sub-mm and mm-wave probe geometry and topology on the measurement results of dedicated test-structures calibrated with on-wafer TRL. These results are compared against 3D EM simulation of the intrinsic test-structures. To analyze difference between the measured and intrinsic EM simulation results, onwafer TRL calibration performed on EM simulation results of a dedicated test-structure is also presented.

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Meander type transmission line design for on-wafer TRL calibration

Cited by 8 publications

References 5 publications

THz Characterization and Modeling of SiGe HBTs: Review (Invited)

THz Characterization and Modeling of SiGe HBTs: Review (Invited)

Meander-Type Lines: An Innovative Design for On-Wafer TRL Calibration for mmW and Sub-mmW Frequencies Measurements

Importance of complete characterization setup on on-wafer TRL calibration in sub-THz range

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