Silica-supported titania powders with 50, 36, 13 and 4 wt% of TiO2 (TiO2-50/SiO2, TiO2-36/SiO2, TiO2-13/SiO2 and TiO2-4/SiO2) were prepared by hydrolysis of TiCl4 in the presence of silica, followed by calcination at 500 degrees C. The formation of Ti-O-Si linkages was confirmed by diffuse reflectance infrared Fourier transform spectroscopy. Atomic force microscopy indicated the presence of titania crystals larger than 15 nm. All supported materials exhibited a blue-shift of the TiO2 absorption edge, which was attributed to an electronic semiconductor support interaction. Bandgap energies of TiO2-50/SiO2, TiO2-36/SiO2, TiO2-13/SiO2 and TiO(2)4/SiO2 were measured to be 3.28, 3.36, 3.40 and 3.42 eV, respectively, as compared to 3.15 eV for unsupported TiO2. From these values, and from the quasi-Fermi level of electrons, a high anodic shift of both the valence and the conduction band was estimated. X-ray photoelectron spectroscopy (XPS) measurements of oxygen 1s- and titanium 2p-binding energies confirmed the anodic shift of the band edges.

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The semiconductor catalyzed photoaddition of cyclopentene or cyclohexene to various novel electron-poor imines of type p-XC(6)H(4)(CN)C[double bond, length as m-dash]N(COPh) (X = H, F, Cl, Br, Me, MeO) was investigated as a function of the nature of the cadmium sulfide photocatalyst. Irradiation (lambda>/= 350 nm) of silica supported cadmium sulfide surprisingly did not afford the expected olefin-imine adducts but an imine hydrocyanation product via an unprecedented dark reaction. However, when silica was replaced by zinc sulfide as the support for cadmium sulfide, the expected homoallylic N-benzoyl-alpha-amino cyanides were isolated in yields of 65-84%. Thus, chemoselectivity is introduced through replacing an insulating by a semiconducting support, a hitherto unknown effect in semiconductor photocatalysis. From the sign of the time resolved photovoltage it is found that the mixed metal sulfide interface CdS/ZnS increases the lifetime of photogenerated electron-hole pairs by about one order of magnitude as compared to the SiO(2)/CdS system. The reaction rate increases with increasing imine sigma-Hammett constants and decreasing stability of intermediate benzyl radicals.