This paper addresses, for the first time, an analysis of the total quantum efficiency of lateral SOI PIN photodiodes with different intrinsic lengths in the 300 to 500 K range simultaneously considering back-gate bias and temperature influences. Experimental results showed that the mode of operation changes the behavior of the devices concerning dark and photocurrents, while the temperature variation produces different trades in quantum efficiency related to the absorption length and the diffusion length variation.

This paper presents an experimental comparative study between the Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) manufactured with the Wave ("S" gate geometry) and the standard layout (CnM) considering the Total Ionizing Dose (TID) effects and taking into account that the devices were biased during the radiation procedure to emphasize the effects. Due to the special layout characteristics and the different effects of the bird’s beaks regions of the Wave MOSFET (WnM) compared to the conventional rectangular layout, this innovative layout proposal for MOSFETs is able to improve the device TID tolerance without adding cost to the Complementary MOS (CMOS) manufacturing process.