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Quantum dots embedded within nanowires represent one of the most promising technologies for applications in quantum photonics. Whereas the top-down fabrication of such structures remains a technological challenge, their bottom-up fabrication through self-assembly is a potentially more powerful strategy. However, present approaches often yield quantum dots with large optical linewidths, making reproducibility of their physical properties difficult. We present a versatile quantum-dot-innanowire system that reproducibly self-assembles in core-shell GaAs/AlGaAs nanowires. The quantum dots form at the apex of a GaAs/AlGaAs interface, are highly stable, and can be positioned with nanometre precision relative to the nanowire centre. Unusually, their emission is blue-shifted relative to the lowest energy continuum states of the GaAs core. Large-scale electronic structure calculations show that the origin of the optical transitions lies in quantum confinement due to Al-rich barriers. By emitting in the red and self-assembling on silicon substrates, these quantum dots could therefore become building blocks for solid-state lighting devices and third-generation solar cells. S emiconductor quantum dots have been shown to be excellent building blocks for quantum photonics applications, such as single-photon sources and nano-sensing. Desirable properties of a single-photon emitter include high-fidelity anti-bunching (very small g 2 (t = 0)), narrow emission lines (ideally transform limited to a few microelectronvolt) and high brightness (>1 MHz count rate on standard detector). For simplicity, these properties should be achieved either with electrical injection or non-resonant optical excitation. Desirable properties of a nano-sensor include a high sensitivity to local electric and magnetic fields, with the quantum dot located as close as possible to the target region. A popular realization involves Stranski-Krastanow InGaAs quantum dots embedded in a three-dimensional matrix, which are excellent building blocks for the realization of practical singlephoton sources 1 . However, the photon extraction out of the bulk semiconductor is highly inefficient on account of the large mismatch in refractive indices of GaAs and vacuum. An attractive way forward is to embed the quantum dots in a nanowire 2 . To solve the extraction problem, the nanowire is designed to operate as a single-mode waveguide, a so-called photonic nanowire, with a taper as photon out-coupler 3 . Also, for nano-sensing applications, a quantum dot in a nanowire can be located much closer to the active medium. Top-down fabrication of the photonic waveguide is technologically complex, however. Bottom-up fabrication of the photonic waveguide is very attractive 4-6 , but it is at present challenging to self-assemble quantum dots in the nanowires with narrow linewidths and high yields 7,8 . Nano-sensing applications are at present not highly developed. Other degrees of freedom of the quantum-dot-in-nanowire system that can be usefully exploited are the mechanical modes ...

Theory predicts that periodic photonic nanostructures should outperform their random counterparts in trapping light in solar cells. However, the current certified world-record conversion efficiency for amorphous silicon thin-film solar cells, which strongly rely on light trapping, was achieved on the random pyramidal morphology of transparent zinc oxide electrodes. Based on insights from waveguide theory, we develop tailored periodic arrays of nanocavities on glass fabricated by nanosphere lithography, which enable a cell with a remarkable short-circuit current density of 17.1 mA/cm2 and a high initial efficiency of 10.9%. A direct comparison with a cell deposited on the random pyramidal morphology of state-of-the-art zinc oxide electrodes, replicated onto glass using nanoimprint lithography, demonstrates unambiguously that periodic structures rival random textures.

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Artificial PbTiO3/SrTiO3 superlattices were constructed using off-axis RF magnetron sputtering. X-ray diffraction and piezoelectric atomic force microscopy were used to study the evolution of the ferroelectric polarization as the ratio of PbTiO3 to SrTiO3 was changed. For PbTiO3 layer thicknesses larger than the 3-unit cells SrTiO3 thickness used in the structure, the polarization is found to be reduced as the PbTiO3 thickness is decreased. This observation confirms the primary role of the depolarization field in the polarization reduction in thin films. For the samples with ratios of PbTiO3 to SrTiO3 of less than one a surprising recovery of ferroelectricity that cannot be explained by electrostatic considerations was observed.The construction of artificial ferroelectric oxide superlattices with fine periodicity presents exciting possibilities for the development of new materials with extraordinary properties and furthermore is an ideal probe for understanding the fundamental physics of ferroelectric materials.The most studied system at present is BaTiO 3 /SrTiO 3 [1,2,3,4,5,6,7,8] In BaTiO 3 /SrTiO 3 , first principles studies [5] suggest that both the SrTiO 3 and BaTiO 3 layers are polarized such that the polarization is approximately uniform throughout the superlattice. The driving force behind this is the large electrostatic energy penalty for a buildup of charge at the interface caused by discontinuous polarization in the normal direction. The electrostatic model proposed by Neaton and Rabe [5] to explain their first principles results for BaTiO 3 /SrTiO 3 superlattices is very similar to the electrostatic model applied to calculate the effect of the depolarization field in ultra-thin ferroelectric films with realistic electrodes [18,19,20]. Experimentally it was recently shown that the reduced polarization observed in monodomain thin PbTiO 3 can be explained by the presence of a depolarization field resulting from imperfect screening of the polarization [21]. Recent work also suggests that, under certain conditions, the electrostatic energy due to depolarization fields will drive the system to form domains as observed by Fong et al. [23] and Nagarajan et al. [24]. In this letter we use PbTiO 3 /SrTiO 3 superlattices to probe the effect of a reduced ferroelectric thickness in a dielectric environment. Our data show that the behaviour observed in PbTiO 3 thin films is reproduced for PbTiO 3 layers thicker than three unit cells. However, for thinner ferroelectric layers a surprising recovery of ferroelectricity that cannot be explained by electrostatic considerations was observed.The superlattices of PbTiO 3 /SrTiO 3 were prepared on conducting 0.5% Nb doped (001) SrTiO 3 substrates using off-axis RF magnetron sputtering with conditions similar to those used for growing high quality epitaxial c-axis PbTiO 3 thin films [21]. For all the samples discussed in this paper, the SrTiO 3 thickness was fixed at three unit cells (about 12Å). At room temperature the in-plane lattice parameters of tetragonal ferroelec...