The rich array of conventional and exotic electronic properties that can be generated by oxide heterostructures is of great potential value for device applications. However, only single transistors bare of any circuit functionality have been realized from complex oxides. Here, monolithically‐integrated n‐type metal‐oxide‐semiconductor logic circuits are reported that utilize the two‐dimensional electron liquid generated at the LaAlO3/SrTiO3 interface. Providing the capability to process the signals of functional oxide devices such as sensors directly on oxide chips, these results illustrate the practicability and the potential of oxide electronics.

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New 4th-generation synchrotron sources, with their increased brilliance, promise to greatly improve the performances of coherent X-ray microscopy. This perspective is of major interest for crystal microscopy, which aims at revealing the 3D crystalline structure of matter at the nanoscale, an approach strongly limited by the available coherent flux. Our results, based on Bragg ptychography experiments performed at the first 4th-generation synchrotron source, demonstrate the possibility of retrieving a high-quality image of the crystalline sample, with unprecedented quality. Importantly, the larger available coherent flux produces datasets with enough information to overcome experimental limitations, such as strongly deteriorated scanning conditions. We show this achievement would not be possible with 3rd-generation sources, a limit that has inhibited the development of this otherwise powerful microscopy method, so far. Hence, the advent of next-generation synchrotron sources not only makes Bragg ptychography suitable for high throughput studies but also strongly relaxes the associated experimental constraints, making it compatible with a wider range of experimental set-ups at the new synchrotrons.

We have integrated single and coupled superconducting transmon qubits into flip-chip modules. Each module consists of two chips - one quantum chip and one control chip - that are bump-bonded together. We demonstrate time-averaged coherence times exceeding 90μs, single-qubit gate fidelities exceeding 99.9%, and two-qubit gate fidelities above 98.6%. We also present device design methods and discuss the sensitivity of device parameters to variation in interchip spacing. Notably, the additional flip-chip fabrication steps do not degrade the qubit performance compared to our baseline state-of-the-art in single-chip, planar circuits. This integration technique can be extended to the realisation of quantum processors accommodating hundreds of qubits in one module as it offers adequate input/output wiring access to all qubits and couplers.