Nitridation of HfSiO films improves certain physical and electrical properties-when using gate stack layers-such as their crystallization temperature and their resistance to interdiffusion. We have studied the band alignment of HfSiO and HfSiON films by soft x-ray photoemission, oxygen K-edge x-ray absorption, and spectroscopic ellipsometry. Nitridation of HfSiO reduced the band gap by 1.50 eV± 0.05 eV, and the valence-and conduction-band offsets by 1.2 eV± 0.1 eV and 0.33 eV± 0.05 eV, respectively. Although the band-gap reduction should lead to increased leakage, the barrier heights are still sufficient for proposed near-future complementary metaloxide-semiconductor applications.

To extend the scaling beyond the most widely used poly(styrene-b-methyl methacrylate) (PS-b-PMMA), organic high- block copolymers (BCPs) were developed. Vertically oriented BCP domains were obtained by simple coat and bake process without application of an additional layer of a topcoat material. In addition, process-friendly conditions including low bake temperature (< 200 °C) and short bake time ( 5 min) provided a simple scheme to integrate these high- block copolymers to standard lithography process and pre-patterns defined by 193i lithography. Successful demonstration of directed self-assembly of these high- block copolymers on 193i-defined guiding pre-patterns offers a simple route to access well-aligned perpendicular lamellae and cylinders with a pitch less than 20 nm.

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