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To extend the scaling beyond the most widely used poly(styrene-b-methyl methacrylate) (PS-b-PMMA), organic high- block copolymers (BCPs) were developed. Vertically oriented BCP domains were obtained by simple coat and bake process without application of an additional layer of a topcoat material. In addition, process-friendly conditions including low bake temperature (< 200 °C) and short bake time ( 5 min) provided a simple scheme to integrate these high- block copolymers to standard lithography process and pre-patterns defined by 193i lithography. Successful demonstration of directed self-assembly of these high- block copolymers on 193i-defined guiding pre-patterns offers a simple route to access well-aligned perpendicular lamellae and cylinders with a pitch less than 20 nm.

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To extend directed self-assembly (DSA) of poly(styrene-block-methyl methacrylate), PS-b-PMMA, for higher resolution and potentially improving pattern line edge roughness (LER) and placement accuracy, we have developed a next generation material platform of organic high- block copolymers ("HC series", AZEMBLY™ EXP PME-3000 series). The polymer platform has a built-in orientation control mechanism which results in convenient morphology orientation control without involving topcoat/additive or delicate solvent vapor annealing. Sub-10 nm node lines and spaces (L/S) patterning with two major chemoepitaxy DSA, LiNe and SMART™ processes, was successfully implemented on 300 mm wafer substrates using the PME-3000 lamellar series.

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