Atomic Force Microscopes (AFMs) are widely used for the investigation of samples at the nanometer scale. The metrological AFM used in this work uses a 3 degrees-of-freedom (DOFs) stage, driven by piezo-stack actuators, for sample manipulation in combination with a fixed cantilever. The piezostack actuators suffer from hysteresis, which acts as a nonlinear disturbance on the system and/or can change the system dynamics. The contributions of this paper are the application of feedback control to all 3 DOFs of the metrological AFM and the design and application of a hysteresis feedforward for the asymmetric hysteresis present in the system. The amount of coupling between the DOFs is assessed by a non-parametric multiple-input-multipleoutput (MIMO) identification. Since the dynamics appear to be decoupled in the frequency range of interest, feedback controllers are designed for each DOF separately. For the modeling of the asymmetric hysteresis an extended Coleman-Hodgdon model is proposed. This model is used for feedforward compensation of the hysteresis. The combination of feedback control for all DOFs and the asymmetric hysteresis feedforward enables the AFM to track scanning profiles within the sensor bound of 5 nm. Real-time imaging of the sample is possible with an accuracy of 2 nm.

We present the fabrication, operation, and CMOS integration of arrays of suspended silicon nanowires (SiNWs). The functional structures are obtained by a top-down fabrication approach consisting in a resistless process based on focused ion beam irradiation, causing local gallium implantation and silicon amorphization, plus selective silicon etching by tetramethylammonium hydroxide, and a thermal annealing process in a boron rich atmosphere. The last step enables the electrical functionality of the irradiated material. Doubly clamped silicon beams are fabricated by this method. The electrical readout of their mechanical response can be addressed by a frequency down-mixing detection technique thanks to an enhanced piezoresistive transduction mechanism. Three specific aspects are discussed: (i) the engineering of mechanically coupled SiNWs, by making use of the nanometer scale overhang that it is inherently-generated with this fabrication process, (ii) the statistical distribution of patterned lateral dimensions when fabricating large arrays of identical devices, and (iii) the compatibility of the patterning methodology with CMOS circuits. Our results suggest that the application of this method to the integration of large arrays of suspended SiNWs with CMOS circuitry is interesting in view of applications such as advanced radio frequency band pass filters and ultra-high-sensitivity mass sensors.

In 2015, the energy measurement of some static electricity meters was found to be sensitive to specific conducted electromagnetic disturbances with very fast current changes caused by highly nonlinear loads, leading to meter errors up to several hundred percent. This article describes new results on the electromagnetic compatibility (EMC) of 16 different meters from all over Europe when exposed to real-world disturbance signals. Those test signals were obtained from household appliances and onsite measurements at metered supply points all over Europe. The results show that also the interference signals recorded onsite can cause measurement errors as large as several hundred percent, even for meters that pass the present EMC standards. This unambiguously demonstrates that the present immunity testing standards do not cover the most disturbing conducted interference occurring in present daily-life situations due to the increased use of nonlinear electronics. Furthermore, to enable the adoption of potential new test waveforms in future standards for electricity meter testing, artificial test waveforms were constructed based on real-world waveforms using a piece-wise linear model. These artificial test waveforms were demonstrated to cause meter errors similar to those caused by the original real-life waveforms they are representing, showing that they are suitable candidates for use in improved standardization of electricity meter testing.

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