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Photoelectrical characteristics and photoluminescence of n-Bi2O3∕p-GaSe structures have been investigated. They show photosensitivity in the photon energy range of 1.85–3.10eV. During thermal treatment of the heterojunction, Bi and O atoms diffuse into the GaSe layer, forming two impurity levels located at 0.101 and 0.429 eV above the valence-band top of GaSe.

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Optical absorption in the region of fundamental absorption edge and photoluminescence (at 78 and 293 K) of p-GaSe crystals doped with Te (0.05, 0.10, and 0.05 at. %) have been studied. At low concentrations (0.05 at. %), Te atoms liquidate structural defects in GaSe single crystals and modify their excitonic absorption and photoluminescence. For increased concentrations of 0.10 and 0.50 at. %, Te creates impurity states responsible for the red shift of the fundamental absorption edge of GaSe and appearance of new photoluminescence bands, B (at 2.000 eV) and C (at 1.700 eV). The activation energies of the thermal quenching of Te-related PL bands B and C was found to be 28 and 32 meV (for T<150 K) and 84 and 62 meV (for T>150 K), respectively.