Electron‐induced chemical lithography combined with self‐assembled monolayers and multivalent chelators for high‐affinity capturing of His‐tagged proteins are used to obtain specific, stable, highly parallel, and functional protein micro‐ and nanoarrays on solid substrates. The functionality of the generated large‐area protein arrays is shown in situ via specific, homogeneous, oriented and reversible immobilization of His6‐tagged 20S proteasome and fluorescence labelled His10‐tagged maltose binding proteins.

Extreme-UV interference lithography (EUV-IL) is applied to create chemical nanopatterns in self-assembled monolayers (SAMs) of 4'-nitro-1,1'-biphenyl-4-thiol (NBPT) on gold. X-ray photoelectron spectroscopy shows that EUV irradiation induces both the conversion of the terminal nitro groups of NBPT into amino groups and the lateral crosslinking of the underlying aromatic cores. Large-area ( approximately 2 mm(2)) nitro/amino chemical patterns with periods ranging from 2000 nm to 60 nm can be generated. Regions of pristine NBPT on the exposed samples are exchanged with protein-resistant thiol SAMs of polyethyleneglycol, resulting in the formation of molecular nanotemplates, which can serve as the basis of complex biomimetic surfaces.

A route to produce novel chemically functionalized carbon nanosieves with a thickness of only ≈1nm is presented. The nanosieves (see image) have areas of up to ≈1mm2 with regular openings down to ≈30nm. Carbon nanosieves are made via nanopatterning of self‐assembled monolayers of 4′‐nitro‐1,1′‐biphenyl‐4‐thiols by extreme UV interference lithography.

Articles you may be interested inFabrication of quantum dots using multicoated self-assembled monolayer Self-assembled monolayer cleaning methods: Towards fabrication of clean high-temperature superconductor nanostructures Appl. Phys. Lett. 86, 154104 (2005); 10.1063/1.1899753Patterning of gold film on muscovite mica by using a helium-metastable atom beam and an octanethiol selfassembled monolayer Metallic patterns on freestanding ultrathin supports are desirable for many applications in modern optics or nanomechanics. The authors present four fabrication paths to create gold patterns that are supported by 1 nm thick freestanding graphenoid nanomembranes from self-assembled monolayers. Two fabrication schemes apply resist based lithographic processes to define gold structures on nanosheets. The gold/nanomembrane hybrids are then released from their substrates to form a freestanding structure. In two further fabrication schemes, the direct metal deposition of metal onto a freestanding graphenoid is performed. All four schemes are capable of producing gold patterns on two-dimensional nanomaterials, thus resembling new paths for the routine fabrication of free-floating metallic structures. Redistribution subject to AVS license or copyright; see http://scitation.aip.org/termsconditions. Download to IP: 216.165.95.79 On: Sat, 13 Dec 2014 22:56:39 C6D6 Beyer et al.: Fabrication of metal patterns on freestanding graphenoid nanomembranes C6D6 J.

.55. Jk, 78.66.Fd, 80.15.Hi, 82.80.Yc Ternary and quaternary cubic c-Al x In 1-x N/GaN and c-Al x Ga y In 1-x-y N/GaN heterostructures latticematched to c-GaN on freestanding 3C-SiC substrates were grown by plasma-assisted molecular beam epitaxy. The c-Al x Ga y In 1-x-y N alloy permits the independent control of band gap and lattice parameter. The ternary and quaternary films were grown at 620 °C. Different alloy compositions were obtained by varying the Al and Ga fluxes. The alloy composition was measured by Energy Dispersive X-ray Spectroscopy (EDX) and Rutherford Backscattering Spectrometry (RBS). X-ray reciprocal space map of asymmetric (-1-13) reflex were used to measure the lattice parameters and to verify the lattice match between the alloy and the c-GaN buffer. [3][4][5]. These films permit the independent control of band gap and lattice parameters through changes in the quaternary composition. However, growth of quaternary AlGaInN is a challenge due to the different bond length and desorption temperature of the binary compounds. Al-containing layers normally require much higher growth temperatures than In compounds. In has a high vapor pressure and therefore the growth temperature has to be lowered in order to increase the indium incorporation and to reduce the thermal dissociation of the In-N bonds.Recently, great interest in nonpolar III-nitrides -including cubic III-nitrides -has risen due to the absence of the built-in electrostatic field, which can limit the performance of devices. The cubic IIInitride polytype is metastable and can only be grown successfully in a narrow window of process conditions [6]. For the fabrication of electronic devices also in cubic group III nitrides it is essential to study the influence of strain and to grown lattice matched cubic AlGaInN and AlInN epilayers on GaN.In this work we demonstrate the growth of lattice matched cubic quaternary Al x Ga y In 1-x-y N/GaN heterostructures on freestanding 3C-SiC (001) substrates by plasma assisted molecular beam epitaxy (PAMBE).