2007
DOI: 10.1002/smll.200700516
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Fabrication of Molecular Nanotemplates in Self‐Assembled Monolayers by Extreme‐Ultraviolet‐Induced Chemical Lithography

Abstract: Extreme-UV interference lithography (EUV-IL) is applied to create chemical nanopatterns in self-assembled monolayers (SAMs) of 4'-nitro-1,1'-biphenyl-4-thiol (NBPT) on gold. X-ray photoelectron spectroscopy shows that EUV irradiation induces both the conversion of the terminal nitro groups of NBPT into amino groups and the lateral crosslinking of the underlying aromatic cores. Large-area ( approximately 2 mm(2)) nitro/amino chemical patterns with periods ranging from 2000 nm to 60 nm can be generated. Regions … Show more

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Cited by 84 publications
(105 citation statements)
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References 29 publications
(39 reference statements)
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“…Irradiation of NBPT SAMs with electrons or EUV light results in the lateral cross-linking of adjacent aromatic molecules and in the conversion of the terminal nitro groups into the amino groups. [11,12] These changes can be seen in the XP spectra, Figure 1b. The N1s region shows an amino signal at 399.0 eV, accompanied with a low-intensity shoulder at 400.8 eV, and the nitro signal at 405.5 eV disappears completely.…”
mentioning
confidence: 80%
See 1 more Smart Citation
“…Irradiation of NBPT SAMs with electrons or EUV light results in the lateral cross-linking of adjacent aromatic molecules and in the conversion of the terminal nitro groups into the amino groups. [11,12] These changes can be seen in the XP spectra, Figure 1b. The N1s region shows an amino signal at 399.0 eV, accompanied with a low-intensity shoulder at 400.8 eV, and the nitro signal at 405.5 eV disappears completely.…”
mentioning
confidence: 80%
“…For the fabrication of highly parallel protein nanoarrays we used EUV-IL lithography to introduce cross-linked amino-terminated areas in the NBPT SAM on Au-Pd substrates. [12] In Figure 3. Exchange of the NBPT SAM with the protein resistant EG3-OH SAM in solution at room temperature as a function of time in exchange solution (h) and irradiation dose (mC cm -2 ).…”
mentioning
confidence: 94%
“…Photolithography has been used exclusively to fabricate surface patterns since its introduction with the first integrated circuit, but it is approaching its fundamental limits for creating nanoscale patterns [14]. Extreme ultraviolet (EUV), electron-beam, or X-ray lithography are all techniques that have been proposed to overcome the resolution limit of photolithography, but these are limited in that they all require expensive equipment, and have a slow processing rate that restricts industrial-scale production [15][16][17][18]. Self-assembly has recently emerged as an alternative nanofabrication technique.…”
Section: Introductionmentioning
confidence: 99%
“…Aromatic SAMs are of particular interest for surface modification, as they can be cross-linked into stable carbon nanosheets by electron or EUV exposure (Geyer et al, 1999;Küller et al, 2003;Turchanin et al, 2007). Lithographic patterning is achieved by "proximity printing" using shadow masks or directly by directwrite electron beam lithography.…”
Section: Introductionmentioning
confidence: 99%