The quest to create robust control solutions for Photolithography processes is an ongoing matter. Over the past few decades several threaded and non-threaded Run-to-Run (RtR) control solutions have been introduced addressing various specific Lithography process control requirements. With continually shrinking semiconductor technology nodes, greater interdependencies are being observed between processes requiring more complex control solutions that rely on increasing process context. With higher product mixes, associated metrology costs add to this growing complexity in using existing control solutions effectively.A new dynamic RtR control solution approach in GLOBALFOUNDRIES high mix manufacturing environment offering coverage to all Lithography process steps in Fab8 has been architected and implemented. This approach not only addresses the issues caused in most commonly used 'Threaded' and 'Non-Threaded' control approaches in Lithography but also offers a dynamic thread definition implementation approach.

As photolithography will continue with 193nm immersion multiple patterning technologies for the leading edge HVM process node, the production overlay requirement for critical layers in logic devices has almost reached the scanner hardware performance limit. To meet the extreme overlay requirements in HVM production environment, this study investigates a new integrated overlay control concept for leading edge technology nodes that combines the run-to-run (R2R) linear or high order control loop, the periodic field-by-field or correction per exposure (CPE) wafer process signature control loop, and the scanner baseline control loop into a single integrated overlay control path through the fab host APC system. The goal is to meet the fab requirements for overlay performance, lower the cost of ownership, and provide freedom of control methodology. In this paper, a detailed implementation of this concept will be discussed, along with some preliminary results.

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